LS4448 SILICON EPITAXIAL PLANAR DIODE fast switching diode in QuadroMELF case especially LS-34 suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448. QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V Rectified Current (Average) Half Wave Rectification with Resist. Load (f ≥ 50 Hz) IO 150 Surge Forward Current at t < 1 s and Tj = 25 OC IFSM Power Dissipation 1) mA 500 Ptot 500 mA 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS - 65 to + 175 O 1) C C Valid provided that electrodes are kept at ambient temperature. Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 5 mA at IF = 100 mA VF 0.62 - 0.72 1 V Leakage Current at VR = 20 V at VR = 75 V IR - 25 5 nA µA V(BR)R 100 - V Ctot - 4 pF trr - 4 ns RthA - 0.35 1) K/mW ηv 0.45 - - Reverse Breakdown Voltage tested with 100 µA Pulses Capacitance at VF = VR = 0 Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V 1) Valid provided that electrodes are kept at ambient temperature. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/01/2007 LS4448 Dynamic forward resistance versus forward current Forward characteristics mA 10 LL 4448 LL 4448 3 10 4 Tj=25 oC f=1KHz 5 2 10 2 o Tj=100 C iF 10 3 o Tj=25 C rf 10 5 2 10 2 5 1 2 10 10 -1 5 2 10 -2 0 1 2V 1 10 -1 10 -2 1 10 2 mA 10 VF IF Admissible power dissipation versus ambient temperature Relative capacitance versus reverse voltage Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature mW 1000 LL 4448 LL 4448 Tj=25 oC f=1MHz 900 1.1 800 P tot Ctot(VR ) Ctot(0V) 700 1.0 600 500 0.9 400 300 0.8 200 0.7 100 0 0 o 200 C 100 0 0 Tamb 2 4 6 8 10 V VR SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/01/2007 LS4448 Leakage current versus junction temperature nA 10 4 LL 4448 5 2 10 3 IR 5 Vo ~ ~ ~ 2 5K 5 2nF 60 VRF =2V 2 10 2 10 Rectification Efficiency Measurement Circuit 5 VR =20V 2 1 0 o 200 C 100 Tj Admissible repetitive peak forward current versus pulse duratin Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature A LL 4448 100 v=tp/T I 5 4 3 I FRM 2 v=0 tp 10 I FRM T=1/fp t 0.1 5 4 3 2 0.2 1 0.5 T 5 4 3 2 0.1 10 -5 2 5 10 -4 2 5 10 -3 2 5 10 -2 2 5 10 -1 2 5 1 2 5 10 s tp SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 12/01/2007