SEMTECH_ELEC 1N4148W

1N4148W
Silicon Epitaxial Planar Small Signal Diode
Features
PINNING
• SOD-123 package
DESCRIPTION
PIN
• Fast switching
• These diodes are also available in other case
1
Cathode
2
Anode
style including the DO-35 case with the type
W1
type designation LL4148 and the MicroMELF
Top View
Marking Code: "W1"
Simplified outline SOD-123 and symbol
case with the type designation MCL4148.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
2
1
designation 1N4148, the MiniMELF case with the
Symbol
Value
Unit
Peak Reverse Voltage
VRM
100
V
Reverse Voltage
VR
75
V
Average Rectified Current Half Wave Rectification with
Resistive Load f ≥ 50 Hz
IF(AV)
150
mA
Non-repetitive Peak Forward Surge Current at t = 1 μs
IFSM
2
A
Power Dissipation
Ptot
400
Thermal Resistance from Junction to Ambient Air
RθJA
450
Junction Temperature
TJ
150
O
Storage Temperature Range
Tstg
- 65 to + 150
O
mW
C/W
O
C
C
Electrical Characteristics (Ta = 25 OC)
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 10 mA
Reverse Current
at VR = 20 V
at VR = 75 V
at VR = 20 V, TJ = 150 OC
Capacitance
at VF = VR = 0 V
Reverse Recovery Time
from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω
Voltage Rise when Switching On (tested with 50 mA Pulses
tp = 0.1 μs, Rise Time < 30 ns, fp = 5 to 100 KHz)
VF
-
1
V
-
25
5
50
nA
µA
µA
Ctot
-
4
pF
trr
-
4
ns
Vfr
-
2.5
V
ηv
0.45
-
-
IR
Rectification Efficiency
at f = 100 MHz, VRF = 2 V
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 21/01/2008
1N4148W
Forward characteristics
3
102
I F ( m A)
Vo
5K
~
~
~
2nF
60
VRF =2V
10
Rectification Efficiency Measurement Circuit
10
Tj=100 C
Tj=25 C
1
10-2
10-1
0
2
1
VF (V)
Amissible power dissipation
vs. ambient temperature
Leakage current vs. junction temperature
1000
10
4
5
2
800
103
I R (nA)
P tot (mW)
5
600
400
2
10 2
5
2
10
200
5
VR=20V
2
1
0
200
100
0
Tj ( C)
Reverse capacitance vs. reverse voltage
Amissible repetitive peak forward current vs. pulse duration
100
Tj=25 C
f=1MHz
1.1
5
4
3
2
1.0
10
I FRM (A)
Ctot (VR)
Ctot (0 V)
200
100
Tamb ( C)
0.9
0.8
5
4
3
2
1
V=0
0.1
0.2
0.5
5
4
3
2
0.7
0
2
4
6
VR (V)
8
10
0.1
10-5 2
5
-4
10 2
5
-3 2
10
5
10-2 2
5
-1
10 2
5
1
2
5
tp (s)
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 21/01/2008
10
1N4148W
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123
c
A
∠ ALL ROUND
HE
A
bp
E
D
UNIT
A
bp
c
D
E
HE
v
∠
mm
1.15
1.05
0.6
0.5
0.135
0.127
2.7
2.6
1.65
1.55
3.9
3.7
0.2
5
O
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 21/01/2008