1N6263WS SILICON SCHOTTKY BARRIER DIODE for general purpose applications PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S2 Top View Marking Code: "S2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRRM 40 V Max. Single Cycle Surge Forward Current (10 s Square wave) IFSM 2 Ptot Power Dissipation 400 A 1) mW Junction Temperature Tj 200 O Storage Temperature Range TS - 55 to + 200 O 1) C C Valid provided the leads direct at the case are kept at ambient temperature. Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit V(BR)R 40 - V VF - 0.39 0.9 V IR - 200 nA Ctot - 2.2 pF trr - 1 ns Reverse Breakdown Voltage at IR = 10 μA Forward Voltage at IF = 1 mA at IF = 15 mA Leakage Current at VR = 30 V Junction Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 5 mA , Recover to 0.1 IR SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 1N6263WS SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 1N6263WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 0.00 1.80 1.60 1.35 1.15 2.80 2.30 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006