SEMTECH_ELEC 1N6263WT

1N6263WT
SILICON SCHOTTKY BARRIER DIODE
for general purpose applications
PINNING
DESCRIPTION
PIN
1
Cathode
2
Anode
2
1
I
Top View
Marking Code: "I"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
VRRM
40
V
Power Dissipation
Ptot
400
mW
Max. Single Cycle Surge Forward Current (10 s Square
wave)
IFSM
2
A
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
- 55 to + 150
O
Peak Reverse Voltage
C
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
V(BR)R
40
-
V
Forward Voltage
at IF = 1 mA
at IF = 15 mA
VF
-
0.39
0.9
V
Reverse Leakage Current
at VR = 30 V
IR
-
200
nA
Ctot
-
2.2
pF
trr
-
1
ns
Reverse Breakdown Voltage
at IR = 10 µA
Junction Capacitance
at VR = 0 V, f = 1 MHz
Reverse Recovery Time
at IF = IR = 5 mA, recover to 0.1 IR
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006
1N6263WT
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-523
ALL ROUND
C
A
∠
HE
D
E
bp
A
UNIT
A
bp
C
D
E
HE
V
mm
0.70
0.60
0.4
0.3
0.135
0.127
1.25
1.15
0.85
0.75
1.7
1.5
0.1
∠
5
O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006