SEMTECH_ELEC 1SS106

1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Max. 0.5
Features
• Detection efficiency is very good.
• Small temperature coefficient.
• High reliability with glass seal.
Min. 27.5
Max. 1.9
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
Max. 3.9
ST
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Reverse Voltage
VR
10
V
Average Forward Current
IO
30
mA
Junction Temperature
TJ
125
O
Storage Temperature Range
Tstg
- 55 to + 125
O
C
C
Electrical Characteristics at Ta = 25 OC
Symbol
Min.
Max.
Unit
Forward Current
at VF = 1 V
IF
4.5
-
mA
Reverse Current
at VR = 6 V
IR
-
70
µA
Capacitance
at VR = 1 V, f = 1 MHz
C
-
1.5
pF
Rectifier Efficiency
at Vin = 2 Vrms, f = 40 MHz, RL = 5 KΩ, CL = 20 pF
η
70
-
%
ESD Capability 1)
at C = 200 pF, both forward and reverse direction 1 pulse.
-
100
-
V
Parameter
1)
Failure criterion: IR ≥ 140 µA at VR = 6 V
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/06/2007