1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Max. 0.5 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Reverse Voltage VR 10 V Average Forward Current IO 30 mA Junction Temperature TJ 125 O Storage Temperature Range Tstg - 55 to + 125 O C C Electrical Characteristics at Ta = 25 OC Symbol Min. Max. Unit Forward Current at VF = 1 V IF 4.5 - mA Reverse Current at VR = 6 V IR - 70 µA Capacitance at VR = 1 V, f = 1 MHz C - 1.5 pF Rectifier Efficiency at Vin = 2 Vrms, f = 40 MHz, RL = 5 KΩ, CL = 20 pF η 70 - % ESD Capability 1) at C = 200 pF, both forward and reverse direction 1 pulse. - 100 - V Parameter 1) Failure criterion: IR ≥ 140 µA at VR = 6 V SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/06/2007