LL106 SILICON SCHOTTKY BARRIER DIODE FOR VARIOUS DETECTOR High Speed Switching LL-34 Features • Detection efficiency is very good • Small temperature coefficient • High reliability with glass seal Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Reverse Voltage VR 10 V Average Rectified Current Io 30 mA Junction Temperature Tj 125 O Storage Temperature TStg -55 to +125 O C C Characteristics at Tamb = 25oC Symbol Min. Typ. Max. Unit IF 4.5 - - mA IR - - 70 μA C - - 1.5 pF η 70 - - % - 100 - - V Forward Current at VF = 1V Reverse current at VR = 6V Capacitance at VR = 1V, f = 1MHz Rectifier efficiency at Vin = 2Vrms, f = 40MHz, RL = 5KΩ, CL = 20pF *1 ESD-Capability at C = 200pF,Both forward and reverse direction 1 pulse Note: 1. Failure criterion; IR/140μA at VR = 6V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 13/03/2003