1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0125-0200Z (Previous: ADE-208-153A) Rev.2.00 Oct.23.2003 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.. Ordering Information Type No. Cathode 2nd band Mark Package Code 1SS106 White White H DO-35 H Pin Arrangement 2 1 2nd band Cathode band 1. Cathode 2. Anode Rev.2.00, Oct.23.2003, page 1 of 4 1SS106 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR 10 V Average rectified current IO 30 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward current IF 4.5 — — mA VF = 1 V Reverse current IR — — 70 µA VR = 6 V Capacitance C — — 1.5 pF VR = 1 V, f = 1 MHz — 100 — — V C = 200 pF, Both forward and reverse direction 1 pulse. ESD-Capability Note: *1 1. Failure criterion; IR ≥ 140 µA at VR = 6 V Rev.2.00, Oct.23.2003, page 2 of 4 1SS106 10–1 10–2 10–2 10–3 Reverse current IR (A) Forward current IF (A) Main Characteristics 10–3 10–4 10–5 0 0.4 0.8 1.2 1.6 2.0 10–5 10–6 0 2 4 6 8 10 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f = 1MHz 10 Capacitance C (pF) 10–4 1.0 0.1 0.1 1.0 10 Reverse voltage VR (V) Fig.2 Capacitance vs. Reverse voltage Rev.2.00, Oct.23.2003, page 3 of 4 1SS106 Package Dimensions As of January, 2003 Unit: mm 4.2 Max 26.0 Min φ 0.5 φ 2.0 26.0 Min Package Code JEDEC JEITA Mass (reference value) Rev.2.00, Oct.23.2003, page 4 of 4 DO-35 Conforms Conforms 0.13 g Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. 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