SEMTECH_ELEC BAS85

BAS85
SCHOTTKY BARRIER DIODE
Ultra High-Speed Switching, Voltage Clamping
Protection Circuits and Blocking Applications
Features
• Low forward voltage.
• Guard ring protected.
• Hermetically-sealed leaded glass package.
Absolute Maximum Ratings (Ta = 25oC)
Parameter
Symbol
Limits
Unit
Continuous reverse voltage
VR
30
V
Continuous forward current
IF
200
mA
Average forward current
IF(AV)
200
mA
Repetitive peak forward current
IFRM
300
mA
Non-repetitive peak forward current
IFSM
5
A
Operating ambient temperature
Tamb
-65 to +125
O
C
Junction temperature
Tj
125
O
Storage temperature range
TS
-65 to +150
O
Rthja
320
Thermal resistance from junction to ambient
C
C
K/W
Characteristics at Ta = 25oC
Parameter
Forward voltage
at IF = 0.1mA
at IF = 1mA
at IF = 10mA
at IF = 30mA
at IF = 100mA
Reverse current
at VR = 25V
Reverse recovery time
at IF = 10mA, IR = 10mA, RL = 100Ω
Symbol
Min.
Typ.
Max.
Unit
VF
VF
VF
VF
VF
-
-
240
320
400
500
800
mV
mV
mV
mV
mV
IR
-
-
2.3
μA
trr
-
-
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/08/2005
BAS85
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/08/2005