BAS86 SCHOTTKY BARRIER DIODE LL34 Ultra High-Speed Switching, Voltage Clamping Protection Circuits and Blocking Applications Features • Low forward voltage. • Guard ring protected. • Hermetically-sealed leaded glass package. • High breakdown voltage. Absolute Maximum Ratings (Ta = 25oC) Parameter Symbol Limits Unit Continuous reverse voltage VR 50 V Continuous forward current IF 200 mA Average forward current IF(AV) 200 mA Repetitive peak forward current tp≦1sec.; δ≦0.5 IFRM 500 mA Non-repetitive peak forward current tp=10ms IFSM 5 A Operating ambient temperature Tamb -65 to +125 ℃ Junction temperature Tj 125 ℃ Storage temperature range TS -65 to +150 ℃ Rthj-a 320 K/W Thermal resistance from junction to ambient Characteristics at Ta = 25oC Parameter Symbol Min. Typ. Max. Unit VF VF VF VF VF - - 300 380 450 600 900 mV mV mV mV mV IR - - 5 μA Reverse recovery time at IF = 10mA, IR = 10mA, RL = 100Ω trr - - 4 ns Diode capacitance at VR = 1V, f = 1MHz Cd - - 8 pF Forward voltage at IF = 0.1mA at IF = 1mA at IF = 10mA at IF = 30mA at IF = 100mA Reverse current at VR = 40V (Note 1) Note 1: Pulsed test: tp=300μs; δ=0.02. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/03/2005 BAS86 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/03/2005 BAS86 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 12/03/2005