BAV99 HIGH-SPEED DOUBLE DIODE fast switching in thick and thin-film circuits diode 3 1 Absolute Maximum Ratings (Ta = 25 OC) Parameter 2 Marking Code: A7 SOT-23 Plastic Package Symbol Value Unit VRRM 85 V Continuous Reverse Voltage VR 75 V Continuous Forward Current (Double Diode Loaded) IF 125 mA Continuous Forward Current (Single Diode Loaded) IF 215 mA IFRM 450 mA Non-repetitive Peak Forward Current Tj = 25 C at t = 1 µs at t = 1 ms at t = 1 s IFSM 4.5 1 0.5 A Power Dissipation Ptot 250 mW Tj 150 O Tstg - 65 to + 150 O Symbol Max. Repetitive Peak Reverse Voltage Repetitive Peak Forward Current O Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, Tj = 150 OC at VR = 75 V, Tj = 150 OC Diode Capacitance at f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, IR = 1 mA, RL = 100 Ω Forward Recovery Voltage at IF = 10 mA, tr = 20 ns Thermal Resistance from Junction to ambient 1) 1) VF 0.715 0.855 1 1.25 Unit V 30 1 30 50 nA µA µA µA Cd 1.5 pF trr 4 ns Vfr 1.75 V Rthja 500 K/W IR Device mounted on an FR4 printed-circuit board. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 03/02/2009 BAV99 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 03/02/2009