BAS16 SILICON EPITAXIAL PLANAR SWITCHING DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Marking Code: 5D SOT-23 Plastic Package Applications • Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 85 V Continuous Reverse Voltage VR 75 V Continuous Forward Current IF 215 mA IFRM 500 mA IFSM 4 1 0.5 A Ptot 250 mW Junction Temperature Tj 150 O Storage Temperature Range Ts - 65 to + 150 O Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current t = 1 µs t = 1 ms t=1s Power Dissipation C C Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF VF VF VF - 715 855 1 1.25 mV mV V V Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC IR IR IR IR - 30 1 30 50 nA µA µA µA V(BR)R 75 - V Cd - 2 pF trr - 4 ns Reverse Breakdown Voltage at IR = 100 µA Diode Capacitance at f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, RL = 50 Ω SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/10/2008 BAS16 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/10/2008