DB3, DB4, DC34 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. These diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-motor speed controls, and heat controls. Max. 0.5 Min. 27.5 Max. 1.9 Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Power Dissipation (Ta = 65 OC) Ptot 150 mW Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz) ITRM 2 Tj,Tstg - 40 to + 125 Operating Junction and Storage Temperature Range A C O Characteristics at Ta = 25 OC Parameter Symbol DB3 Breakover Voltage DC34 V(BR)1 and V(BR)2 DB4 Min. Max. 28 36 30 38 35 45 Unit V Breakover Currents I(BR)1 and I(BR)2 - 200 µA Breakover Voltage Symmetry [V(BR)1]-[V(BR)2] - 3.8 V Dynamic Breakover Voltage ΔI = [IBR to IF = 10 mA] | ΔV ± | 5 - V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 08/11/2008 DB3, DB4, DC34 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 08/11/2008