DB3 /DB4 / DC34 TRIGGER DIODES FEATURES VBO : 32V / 34V / 40V VERSIONS LOW BREAKOVER CURRENT DESCRIPTION DO 35 (Glass) High reliability glass passivation insuring parameter stability and protection against junction contamination. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit P Power dissipation on printed circuit (L = 10 mm) Ta = 65 °C 150 mW ITRM Repetitive peak on-state current tp = 20 µs F= 100 Hz 2 A Tstg Tj Storage and operating junction temperature range - 40 to + 125 - 40 to + 125 °C °C Value Unit THERMAL RESISTANCES Symbol Parameter Rth (j-a) Junction to ambient 400 °C/W Rth (j-l) Junction-leads 150 °C/W April 1995 1/4 DB3 / DB4 / DC34 ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol VBO Parameter Test Conditions Breakover voltage * Value C = 22nF ** see diagram 1 Unit DB3 DC34 DB4 MIN 28 30 35 TYP 32 34 40 MAX 36 38 45 V [I+VBOI-I-VBOI] Breakover voltage symmetry C = 22nF ** see diagram 1 MAX ±3 V I∆V± I Dynamic breakover voltage * ∆I = [IBO to IF=10mA] see diagram 1 MIN 5 V see diagram 2 MIN 5 V C = 22nF ** MAX see diagram 3 TYP 1.5 µs VB = 0.5 VBO max see diagram 1 MAX 10 µA VO Output voltage * IBO Breakover current * tr Rise time * IB Leakage current * 100 50 µA 100 * Electrical characteristic applicable in both forward and reverse directions. ** Connected in parallel with the devices. DIAGRAM 1 : Current-voltage characteristics DIAGRAM 2 : Test circuit for output voltage 10 k 500 k 220 V 50 Hz + IF D.U.T VO 0.1 F 10mA -V IBO IB DIAGRAM 3 : Test circuit see diagram 2. Adjust R for lp=0.5A + V 0,5 VBO V lp 90 % VBO - IF 10 % tr 2/4 R = 20 DB3 / DB4 / DC34 Fig.1 : Power dissipation versus ambient temperature (maximum values) Fig.2 : Relative variation of VBO versus junction temperature (typical values) VBO[Tj] o VBO[Tj=25 C] P (mW) 160 1.08 140 120 1.06 100 80 1.04 60 40 1.02 o 20 0 Tj( C) o Tamb ( C) o 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1.00 25 50 75 100 125 Fig.3 : Peak pulse current versus pulse duration (maximum values) I TRM (A) 2 F = 100 Hz o Tj initial = 25 C 1 0.1 tp ( s) 0.01 10 100 1000 10000 3/4 DB3 / DB4 / DC34 PACKAGE MECHANICAL DATA (in millimeters) DO 35 Glass B A B note 1 E /C O E note 1 /D O O /D note 2 REF. DIMENSIONS Millimeters NOTES Inches Min. Max. Min. Max. A 3.050 4.500 0.120 0.117 B 12.7 ∅C 1.530 2.000 0.060 0.079 ∅D 0.458 0.558 0.018 0.022 E 0.500 1.27 1 - The lead diameter ∅ D is not controlled over zone E 2 - The minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59”(15 mm) 0.050 Cooling method by convection and conduction Marking : type number Weight : 0.15 g Polarity : N A Stud torque : N A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All rights reserved. 2 Purchase of I C Components by SGS-THOMSON Microelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in an I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4