SEMTECH_ELEC MMBTA43

MMBTA42 / MMBTA43
NPN Silicon High Voltage Transistors
for high voltage switching and amplifier applications.
As complementary types the PNP transistors
MMBTA92 and MMBTA93 are recommended.
SOT-23 Plastic Package
SOT-23 Plastic Package
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Value
Symbol
MMBTA43
Collector Base Voltage
VCBO
300
200
V
Collector Emitter Voltage
VCEO
300
200
V
Emitter Base Voltage
VEBO
6
6
V
Collector Current Continuous
Total Device Dissipation FR-5 Board
1)
IC
500
mA
Ptot
200
mW
1.8
mW/ OC
Derate above 25OC
1)
Unit
MMBTA42
Thermal Resistance Junction to Ambient
RθJA
417
Junction and Storage Temperature
TJ, Ts
-55 to +150
C/W
O
C
O
FR-5 = 1 x 0.75 x 0.062 in.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
MMBTA42 / MMBTA43
Characteristics at Tamb=25 OC
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE=10Vdc, IC=1mA
Both Types
hFE
25
-
-
at VCE=10Vdc, IC=10mA
Both Types
hFE
40
-
-
at VCE=10Vdc,IC=30mA
MMBTA42
hFE
40
-
-
MMBTA43
hFE
40
-
-
MMBTA42
VCE(sat)
-
0.5
V
MMBTA43
VCE(sat)
-
0.5
V
VBE(sat)
-
0.9
V
Collector Emitter Saturation Voltage
at IC=20mA, IB=2mA
Base Emitter Saturation Voltage
at IC=20mA, IB=2mA
Collector Cutoff Current
at VCB=200V
MMBTA42
ICBO
-
0.1
µA
at VCB=160V
MMBTA43
ICBO
-
0.1
µA
at VEB=6V
MMBTA42
IEBO
-
0.1
µA
at VEB=4V
MMBTA43
IEBO
0.1
µA
MMBTA42
V(BR)CBO
300
-
V
MMBTA43
V(BR)CBO
200
-
V
MMBTA42
V(BR)CEO
300
-
V
MMBTA43
V(BR)CEO
200
-
V
V(BR)EBO
6
-
V
fT
50
-
MHz
MMBTA42
Ccb
-
3
pF
MMBTA43
Ccb
-
4
pF
Emitter Cutoff Current
Collector Base Breakdown Voltage
at IC=100µA
Collector Emitter Breakdown Voltage
at IC=1mA
Emitter Base Breakdown Voltage
at IE=100µA
Current Gain Bandwidth Product
at VCE=20V, IC=10mA, f=100MHz
Collector Base Capacitance
at VCB=20V, IE=0, f=1MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005
MMBTA42 / MMBTA43
120
hFE, DC Current Gain
VCE =10Vdc
TJ=+125°C
100
80
TJ=25°C
60
40
TJ=-55°C
20
0
1.0
0.1
10
100
100
Ceb @ 1MHz
10
1
Ccb @ 1MHz
0.1
0.1
1
10
100
1000
tT, Current-Gain-Bandwidth (MHz)
C, Capacitance (pF)
IC, Collector Current (mA)
Figure 1. DC Current Gain
80
VCE=20V
f=20MHz
TJ=20°C
70
60
50
40
30
20
10
1.0
3.0
5.0 7.0
10
20
30
50 70 100
Ic, Collector Current (mA)
Figure 3. Current-Gain-Bandwidth
VR, Reverse Voltage (volts)
Figure 2. Capacitance
1.4
A VBE(sat) @-55°C, IC/IB=10
B VBE(on) @ -55°C,VCE=10V
1.2
V, Voltage (volts)
2.0
C VBE(sat) @ 125°C,IC/IB=10
1.0
D VBE(sat) @ 25°C,IC/IB=10
0.8
E VBE(on) @ 125°C,VCE=10V
0.6
F VBE(on) @ 25°C,VCE=10V
0.4
G VCE(sat) @ 125°C,IC/IB=10
0.2
H VCE(sat) @ 25°C,IC/IB=10
I VCE(sat) @ -55°C,IC/IB=10
0.0
0.1
1.0
10
100
IC, Collector Current (mA)
Figure 4."on" Voltages
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/10/2005