MMBTA42 / MMBTA43 NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. As complementary types the PNP transistors MMBTA92 and MMBTA93 are recommended. SOT-23 Plastic Package SOT-23 Plastic Package SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Value Symbol MMBTA43 Collector Base Voltage VCBO 300 200 V Collector Emitter Voltage VCEO 300 200 V Emitter Base Voltage VEBO 6 6 V Collector Current Continuous Total Device Dissipation FR-5 Board 1) IC 500 mA Ptot 200 mW 1.8 mW/ OC Derate above 25OC 1) Unit MMBTA42 Thermal Resistance Junction to Ambient RθJA 417 Junction and Storage Temperature TJ, Ts -55 to +150 C/W O C O FR-5 = 1 x 0.75 x 0.062 in. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTA42 / MMBTA43 Characteristics at Tamb=25 OC Symbol Min. Max. Unit DC Current Gain at VCE=10Vdc, IC=1mA Both Types hFE 25 - - at VCE=10Vdc, IC=10mA Both Types hFE 40 - - at VCE=10Vdc,IC=30mA MMBTA42 hFE 40 - - MMBTA43 hFE 40 - - MMBTA42 VCE(sat) - 0.5 V MMBTA43 VCE(sat) - 0.5 V VBE(sat) - 0.9 V Collector Emitter Saturation Voltage at IC=20mA, IB=2mA Base Emitter Saturation Voltage at IC=20mA, IB=2mA Collector Cutoff Current at VCB=200V MMBTA42 ICBO - 0.1 µA at VCB=160V MMBTA43 ICBO - 0.1 µA at VEB=6V MMBTA42 IEBO - 0.1 µA at VEB=4V MMBTA43 IEBO 0.1 µA MMBTA42 V(BR)CBO 300 - V MMBTA43 V(BR)CBO 200 - V MMBTA42 V(BR)CEO 300 - V MMBTA43 V(BR)CEO 200 - V V(BR)EBO 6 - V fT 50 - MHz MMBTA42 Ccb - 3 pF MMBTA43 Ccb - 4 pF Emitter Cutoff Current Collector Base Breakdown Voltage at IC=100µA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=100µA Current Gain Bandwidth Product at VCE=20V, IC=10mA, f=100MHz Collector Base Capacitance at VCB=20V, IE=0, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTA42 / MMBTA43 120 hFE, DC Current Gain VCE =10Vdc TJ=+125°C 100 80 TJ=25°C 60 40 TJ=-55°C 20 0 1.0 0.1 10 100 100 Ceb @ 1MHz 10 1 Ccb @ 1MHz 0.1 0.1 1 10 100 1000 tT, Current-Gain-Bandwidth (MHz) C, Capacitance (pF) IC, Collector Current (mA) Figure 1. DC Current Gain 80 VCE=20V f=20MHz TJ=20°C 70 60 50 40 30 20 10 1.0 3.0 5.0 7.0 10 20 30 50 70 100 Ic, Collector Current (mA) Figure 3. Current-Gain-Bandwidth VR, Reverse Voltage (volts) Figure 2. Capacitance 1.4 A VBE(sat) @-55°C, IC/IB=10 B VBE(on) @ -55°C,VCE=10V 1.2 V, Voltage (volts) 2.0 C VBE(sat) @ 125°C,IC/IB=10 1.0 D VBE(sat) @ 25°C,IC/IB=10 0.8 E VBE(on) @ 125°C,VCE=10V 0.6 F VBE(on) @ 25°C,VCE=10V 0.4 G VCE(sat) @ 125°C,IC/IB=10 0.2 H VCE(sat) @ 25°C,IC/IB=10 I VCE(sat) @ -55°C,IC/IB=10 0.0 0.1 1.0 10 100 IC, Collector Current (mA) Figure 4."on" Voltages SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005