SEMTECH_ELEC MMBTA13

MMBTA13
NPN Silicon Epitaxial Planar Darlington Transistor
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Symbol
Value
Unit
Collector Emitter Voltage
VCES
30
V
Collector Base Voltage
VCBO
30
V
Emitter Base Voltage
VEBO
10
V
IC
500
mA
Total Device Dissipation
Derate above 25 OC
Ptot
200
2.8
mW
mW/ OC
Thermal Resistance, Junction to Ambient
RθJA
357
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
Collector Current
C/W
O
C
C
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/10/2005
MMBTA13
Characteristics at Tamb=25 OC
Symbol
Min.
Max.
Unit
at IC=10mA, VCE=5V
hFE
5000
-
-
at IC=100mA, VCE=5V
hFE
10,000
-
-
ICBO
-
0.1
μA
IEBO
-
0.1
μA
V(BR)CES
30
-
V
VCE(sat)
-
1.5
V
VBE(on)
-
2
V
fT
125
-
MHz
DC Current Gain
Collector Cutoff Current
at VCB=30V
Emitter Cutoff Current
at VEB=10V
Collector Emitter Breakdown Voltage
at IC=100μA
Collector Saturation Voltage
at IC=100mA, IB=0.1mA
Base On Voltage
at IC=100mA, VCE=5V
Current Gain – Bandwidth Product
at IC=10mA, VCE=10V, f=100MHz
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/10/2005