SEMTECH_ELEC ZM

ZM-PTZ3V6B ~ ZM-PTZ36B
SILICON EPITAXIAL PLANAR ZENER DIODES
LL-41
Features
• Small surface mounting type
• 1 W of power can be obtained despite compact size
• High surge withstand level
Applications
• Voltage regulation and voltage limiting
• Voltage surge absorption
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Ptot
1
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
- 55 to + 150
O
Power Dissipation
1)
1)
Zener Voltage Range
Min.
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13.3
14.7
16.2
18
20
22
24
27
30
33
36
ZM-PTZ3V6B
ZM-PTZ3V9B
ZM-PTZ4V3B
ZM-PTZ4V7B
ZM-PTZ5V1B
ZM-PTZ5V6B
ZM-PTZ6V2B
ZM-PTZ6V8B
ZM-PTZ7V5B
ZM-PTZ8V2B
ZM-PTZ9V1B
ZM-PTZ10B
ZM-PTZ11B
ZM-PTZ12B
ZM-PTZ13B
ZM-PTZ15B
ZM-PTZ16B
ZM-PTZ18B
ZM-PTZ20B
ZM-PTZ22B
ZM-PTZ24B
ZM-PTZ27B
ZM-PTZ30B
ZM-PTZ33B
ZM-PTZ36B
2)
W
C
C
Mounting density of other power components should be taken into consideration when laying out the pattern.
Type
1)
Unit
Vz (V)
Max.
4
4.4
4.8
5.2
5.7
6.3
7
7.7
8.4
9.3
10.2
11.2
12.3
13.5
15
16.5
18.3
20.3
22.4
24.5
27.6
30.8
34
37
40
Operating Resistance
Reverse current
Zz (Ω)
IZ (mA)
40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20
20
10
10
10
10
10
10
Max.
15
15
15
10
8
8
6
6
4
4
6
6
8
8
10
10
12
12
14
14
16
16
18
18
20
IR (uA)
IZ (mA)
40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20
20
10
10
10
10
10
10
Max.
20
20
20
20
20
20
20
20
20
20
20
10
10
10
10
10
10
10
10
10
10
10
10
10
10
VR (V)
1
1
1
1
1
1.5
3
3.5
4
5
6
7
8
9
10
11
12
13
15
17
19
21
23
25
27
Tested with pulses tp = 20 ms.
The operating resistances (ZZ, ZZK) are measured by superimposing a minute alternating current on the regulated current
(Iz).
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/05/2006
ZM-PTZ3V6B ~ ZM-PTZ36B
Derating curve
Rise in surface temperature
200
Rise in diode a surface
temperature( C)
Power dissipation(mW)
Ceramic substrate
82x30x1.0(mm)
800
400
Individual part
(not mounted)
200
ALUMINA SUBSTRATE
114X124X1.6(mm)
Glass epoxy substrate
32x30x1.6(mm)
Rise in diode a surface
temperature( C)
1200
Rise in surface temperature
1.5W
100
1W
1.5W
100
0.5W
0.5W
87.5 100
50
200
150
5.6 6.2 6.8 7.5 8.2 9.1 10
12
11
Zener current, (A)
-0.04
3.9
3.6
10m
Iz=40mA
0
100
Mounting quantity(pcs/substrate)
Zener voltage characteristics
Iz=20mA
0.04
10
1
100m
4.3 4.7 5.1
0.08
100
Mounting quantity(pcs/substrate)
Zener voltage - temp.
coefficient characteristics
0.10
0
10
1
Ta ( C)
Temperature coefficient (%/ C)
GLASS EPOXY SUBSTRATE
144X220X1.6(mm)
0
0
1W
15 16
20
18
24
22
30
27
13
36
33
1m
100
10
125-25 C
-0.08
0
1
10
20
30
Zener voltage (V)
40
0
5
10
20
15
25
30
35
Zener voltage (V)
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/05/2006
40