SEMTECH ZM

ZM-PTZ3.6B ~ ZM-PTZ36B
SILICON EPITAXIAL PLANAR ZENER DIODES
LL-41
Features
1) Small surface mounting type
2) 1W of power can be obtained despite compact size
3) High surge withstand level
Applications
1) Voltage regulation and voltage limiting
2) Voltage surge absorption
Absolute Maximum Ratings (Ta = 25oC)
Symbol
Value
Unit
Power Dissipation 1)
Ptot
1
W
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
-55 to +150
O
C
C
1) Mounting density of other power components should be taken into consideration when laying out the pattern.
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 05/11/2003
ZM-PTZ3.6B ~ ZM-PTZ36B
TYPE
Min.
Zener Voltage Range
Operating Resistance
Reverse current
Vz (V)
Zz (Ω)
IR (uA)
Max.
IZ
(mA)
Max.
IZ
(mA)
Max.
VR
(V)
ZM-PTZ3.6B
3.6
4
40
15
40
20
1
ZM-PTZ3.9B
3.9
4.4
40
15
40
20
1
ZM-PTZ4.3B
4.3
4.8
40
15
40
20
1
ZM-PTZ4.7B
4.7
5.2
40
10
40
20
1
ZM-PTZ5.1B
5.1
5.7
40
8
40
20
1
ZM-PTZ5.6B
5.6
6.3
40
8
40
20
1.5
ZM-PTZ6.2B
6.2
7
40
6
40
20
3
ZM-PTZ6.8B
6.8
7.7
40
6
40
20
3.5
ZM-PTZ7.5B
7.5
8.4
40
4
40
20
4
ZM-PTZ8.2B
8.2
9.3
40
4
40
20
5
ZM-PTZ9.1B
9.1
10.2
40
6
40
20
6
ZM-PTZ10B
10
11.2
40
6
40
10
7
ZM-PTZ11B
11
12.3
20
8
20
10
8
ZM-PTZ12B
12
13.5
20
8
20
10
9
ZM-PTZ13B
13.3
15
20
10
20
10
10
ZM-PTZ15B
14.7
16.5
20
10
20
10
11
ZM-PTZ16B
16.2
18.3
20
12
20
10
12
ZM-PTZ18B
18
20.3
20
12
20
10
13
ZM-PTZ20B
20
22.4
20
14
20
10
15
ZM-PTZ22B
22
24.5
10
14
10
10
17
ZM-PTZ24B
24
27.6
10
16
10
10
19
ZM-PTZ27B
27
30.8
10
16
10
10
21
ZM-PTZ30B
30
34
10
18
10
10
23
ZM-PTZ33B
33
37
10
18
10
10
25
ZM-PTZ36B
36
40
10
20
10
10
27
1) The Zener voltage is measured 40ms after power is supplied.
2) The operating resistances (ZZ, ZZK) are measured by superimposing a minute alternating current on the regulated
current (Iz).
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 05/11/2003
ZM-PTZ3.6B ~ ZM-PTZ36B
Derating curve
Rise in surface temperature
200
Rise in diode a surface
temperature( C)
Power dissipation(mW)
Ceramic substrate
82x30x1.0(mm)
800
400
Individual part
(not mounted)
200
ALUMINA SUBSTRATE
114X124X1.6(mm)
Glass epoxy substrate
32x30x1.6(mm)
Rise in diode a surface
temperature( C)
1200
Rise in surface temperature
1.5W
100
1W
1.5W
1W
100
0.5W
0.5W
0
0
0
50
87.5 100
200
150
5.6 6.2 6.8 7.5 8.2 9.1 10
12
11
3.9
10m
Zener current, (A)
Iz=40mA
0
-0.04
100
Mounting quantity(pcs/substrate)
Zener voltage characteristics
Iz=20mA
0.04
10
1
100m
4.3 4.7 5.1
0.08
100
Mounting quantity(pcs/substrate)
Zener voltage - temp.
coefficient characteristics
0.10
10
1
Ta ( C)
Temperature coefficient ( %/ C)
GLASS EPOXY SUBSTRATE
144X220X1.6(mm)
15
16
20
18
24
22
30
27
36
33
13
3.6
1m
100
10
125-25 C
-0.08
1
0
10
20
30
Zener voltage (V)
40
0
5
10
15
20
25
30
35
Zener voltage (V)
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 05/11/2003
40