2ES032XXXJL 2ES032XXXJL SERIES TRANSIENT VOLTAGE SUPPRESSORS DESCRIPTION ¾ 2ES032XXXJL series are transient voltage suppressors diode chips for plastic package that fabricated in silicon epitaxial planar technology; ¾ Excellent clamping capability; ¾ Fast response time ; ¾ Low leakage; ¾ ESD>16KV(Human Body Model); ¾ Top metal is AL, Back metal is Au; 2ES032XXX JLCHIP TOPOGRAPHY ¾ Chip size: 320μm X 320μm; La: Chip Size: 320μm; ¾ Chip Thickness: 180±20μm. Lb: Pad Size: 180μm; ABSOLUTE MAXIMUM RATINGS Characteristics Symbol Value Unit Total Power Dissipation@ Tamb=25°C PD 200 mW Maximum Operation Junction Temperature TJ 175 °C Tstg -50~+175 °C Storage Temperature Range ELECTRICAL CHARACTERISTICS (Tamb=25°C) Symbol Parameters IPP Maximum reverse peak pulse current VC Clamping voltage @ IPP VRWM IR VBR IT Working peak reverse voltage Maximum reverse leakage current @ VRWM Breakdown voltage @ IT Test current HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2008.03.17 Page 1 of 2 2ES032XXXJL ELECTRICAL CHARACTERISTICS (For packaged diodes, Tamb==25°C) IR(μA)@ VBR(V) VRWM @IT Max. Max. Typ. mA 2ES032025JL 2.5 6.0 4.0 2ES032033JL 3.3 0.05 2ES032050JL 5.0 2ES032060JL IT VC (V)@ IPP(A)* PPK(W) C(PF) Max. Max Max Typ. 1.0 10.9 11.0 120 145 5.0 1.0 14.1 11.2 158 105 0.05 6.2 1.0 18.6 9.4 174 80 6.0 0.01 6.8 1.0 20.5 8.8 181 70 2ES032070JL 7.0 0.01 7.5 1.0 22.7 8.8 200 65 2ES032120JL 12.0 0.01 14.1 1.0 25.0 9.6 240 55 Type VRWM (V) Max IPP Note: 1. VF<0.9V@IF=10mA for all types; 2. * 8×20μm plus waveform. HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2008.03.17 Page 2 of 2