3VD324500YL 3VD324500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD324500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in ¾ 3 1 advanced silicon epitaxial planar technology; Advanced termination scheme to provide enhanced voltage-blocking capability; ¾ Avalanche Energy Specified; ¾ Source-to-Drain Diode Recovery Time Comparable to a 1-Gate PAD Discrete Fast Recovery Diode; ¾ The chips may packaged in TO-220 type; ¾ The packaged product is widely used in AC-DC power 3-Source PAD CHIP TOPOGRAPHY suppliers, DC-DC converters and H-bridge PWM motor drivers; ¾ Die size: 3.78mm*2.78mm; ¾ Chip Thickness: 300±20μm; ¾ Top metal: Al, Backside Metal: Ag. ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±20 V Drain Current ID 5.5 A Power Dissipation (TO-220 Package) PD 74 W Operation Junction Temperature TJ 150 °C Tstg -55～+150 °C Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Drain -Source Breakdown Voltage Symbol BVDSS Test conditions VGS=0V, ID=250µA Min. Typ. Max. Unit 500 - - V Gate Threshold Voltage VTH VGS= VDS, ID=250µA 2 - 4 V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V - - 1 µA VGS=10V, ID=2.7A - - 1.5 Ω IGSS VGS=±20V, VDS=0V - - ±100 nA VFSD IS=5.5A, VGS=0V - - 1.6 V Static Drain- Source On State Resistance Gate-Source Leakage Current Source-Drain Diode Forward on Voltage RDS(on) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2008.10.15 Page 1 of 1