2KG034350JL 2KG034350JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG034350JL is a high speed switching diode chip fabricated in planar technology. Ø High reverse breakdown voltage rating. Ø This chip can be encapsulated as MBD3004 switching diode. Ø This chip has several thicknesses, can suit for different plastic package. The top electrodes material is Al, and the back-side electrodes material is Au. 2KG034350JL CHIP TOPOGRAPHY Ø Chip size: 0.34 X 0.34 (mm2); La: Chip Size: 340µm; Ø Chip Thickness: 155±20µm or 180±20µm; Lb: Pad Size: 180µm; MAXIMUM RATINGS (Ta=25°C) Characteristics Symbol Value Unit VRRM 350 V DC Blocking Voltage VR 300 V Forward Continuous Current IF 225 mA IFSM 4.0 A TJ 150 °C TSTG -65~+150 °C Repetitive Peak Reverse Voltage Peak Forward Surge [email protected]µs Maximum Operation Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25°C) Characteristics Forward Voltage Symbol VF Test Conditions Min. Typ. Max. Unit IF=20mA. -- -- 0.87 V IF=100mA. -- -- 1.0 V IF=200mA. -- -- 1.25 V Reverse Voltage VBR IB=100µA. 350 -- -- V Reverse Current IR VR=240V. -- -- 100 nA Total Capacitance CT f=1MHz; VR=0. -- -- 5.0 pF Reverse Recovery Time Trr+ -- -- 50 ns IF=IR=30mA, RL=100Ω; measured at I R=3mA. HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2008.01.29 Page 1 of 1