2KG026075YQ 2KG026075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG026075YQ is a high speed switching diode chip fabricated in planar technology. Ø This chip can be encapsulated as 1N4148 switching diode. Ø When the chip is selected glass package, the chip thickness is 100µm, and the top electrodes material is Ag bump, the back-side electrodes material is Ag. Ø Chip size: 0.26 X 0.26 (mm)2. 2KG026XXX CHIP TOPOGRAPHY 2KG026075YQ ELECTRICAL CHARACTERISTICS (TJ=25°C) Characteristics Symbol Forward Voltage VF Reverse Voltage VBR Reverse Current IR Diode Capacitance Cd Test Conditions Min. Typ. Max. Unit IF=10mA. -- -- 1.0 V IF=100mA. 0.62 0.9 1.2 V IB=100µA. 100 120 -- V VR=20V. -- -- 25 nA VR=75V. -- -- 5 µA f=1MHz; VR=0. -- 1.9 4 pF -- -- 4 ns When switched from I F=10mA to Reverse Recovery Time trr VR=6V; RL=100Ω; measured at IR=1mA. 2KG026075YQ APPEARANCE Top side material is Ag ball Chip Appearance Diagram Parameter Symbol Min. Type Max. Unit Chip Size D 220 -- 240 µm Chip Thickness C 85 -- 120 µm Bump Diameter A 135 -- 160 µm Bump Height B 20 -- 40 µm Scribe Line Width / -- 40 -- µm HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2006.04.25 Page 1 of 1