SILIKRON 2N7002K

2N7002K
GENERAL FEATURES
● VDS = 60V,ID = 0.3A
RDS(ON) < 3Ω @ VGS=5V
RDS(ON) < 2Ω @ VGS=10V
ESD Rating:1000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
APPLICATION
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps,
Hammers,Display, Memories, Transistors, etc.
●Battery Operated Systems
●Solid-State Relays
Marking and pin Assignment
SOT23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
S72K
2N7002K
SOT23
Tape width
Quantity
8 mm
3000 units
Ø180mm
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
0.3
A
IDM
0.8
A
PD
0.35
W
TJ,TSTG
-55 To 150
℃
RθJA
350
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
©Silikron Semiconductor CO.,LTD.
BVDSS
VGS=0V ID=250μA
1
60
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2N7002K
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate-Source Breakdown Voltage
IDSS
IGSS
VDS=50V,VGS=0V
10
nA
VDS=60V,VGS=0V
1
μA
VGS=±5V,VDS=0V
100
nA
VGS=±10V,VDS=0V
150
nA
VGS=±20V,VDS=0V
10
uA
BVGSO
VDS=0V, IG=±250uA
±20
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1
Drain-Source On-State Resistance
RDS(ON)
V
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
2.5
VGS=10V, ID=0.5A
2
VGS=5V, ID=0.05A
3
VDS=10V,ID=0.2A
V
Ω
0.08
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=25V,VGS=0V,
F=1.0MHz
30
PF
6
PF
3
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
Turn-Off Delay Time
td(off)
VDD=30V,VGS=10V,
RGEN=10Ω,RL=150Ω
ID=0.2A
Qg
VDS=10V,ID=0.25A,VGS=4.5V
VSD
VGS=0V,IS=0.2A
Total Gate Charge
0.4
25
nS
35
nS
0.6
nC
1.3
V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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2N7002K
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
Vdd
td(on)
Rl
Vin
Vgs
Rgen
D
toff
tf
td(off)
90%
Vout
VOUT
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
Normalized Effective
Transient Thermal Impedance
Figure 1: Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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2N7002K
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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2N7002K
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron
representative nearest you before using any Silikron products described or contained herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test devices
mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could give rise to
accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to
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Silikron Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use
or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product
that you intend to use.
This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
©Silikron Semiconductor CO.,LTD.
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