SSF4703 DESCRIPTION The SSF4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES Schematic diagram ● MOSFET VDS = -20V,ID = -3.4A RDS(ON) < 160mΩ @ VGS=-1.8V RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V ●SCHOTTKY VR = 20V, IF = 1A, VF<0.5V @ 0.5A Marking and pin Assignment ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●DC-DC conversion applications ●Load switch ●Power management DFN2X3-8L Bottom View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity 4703 SSF4703 DFN2X3-8L － － － ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol MOSFET Schottky Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V ID -3.4 A IDM -15 A Drain Current-Continuous@ Current-Pulsed (Note 1) Schottky reverse voltage VR 20 V Continuous Forward Current IF 1.9 A Pulsed Forward Current IFM 7 A Maximum Power Dissipation PD 1.7 0.96 W TJ,TSTG -55 To 150 -55 To 150 ℃ Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS MOSFET Thermal Resistance, Junction-to-Ambient (Note 2) ©Silikron Semiconductor CO.,LTD. RθJA 1 75 http://www.silikron.com ℃/W v1.2 SSF4703 Schottky Thermal Resistance, Junction-to-Ambient (Note 2) RθJA 80 ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min ℃/W Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 V Zero Gate Voltage Drain Current IDSS VDS=-16V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V ±100 nA VGS(th) VDS=VGS,ID=-250μA -0.7 -1 V VGS=-4.5V, ID=-3.4A 73 90 VGS=-2.5V, ID=-2.5A 99 120 VGS=-1.8V, ID=-1.5A 133 160 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance RDS(ON) gFS VDS=-5V,ID=-3.4A -0.45 4 mΩ 7 S 540 PF 70 PF DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=-10V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 50 PF Turn-on Delay Time td(on) 10 nS Turn-on Rise Time tr 12 nS 44 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time VDD=-10V,ID=-3.4A VGS=-4.5V,RGEN=3Ω td(off) Turn-Off Fall Time tf 22 nS Total Gate Charge Qg 6.1 nC Gate-Source Charge Qgs 0.6 nC Gate-Drain Charge Qgd 1.6 nC VDS=-10V,ID=-3.4A,VGS=-4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=-1A -0.83 -1 V -2 A 0.5 V 0.1 mA SCHOTTKY PARAMETERS Forward Voltage Drop VF IF=0.5A Maximum reverse leakage current Irm VR=16V Junction Capacitance CT VR=10V 34 Schottky Reverse Recovery Time trr IF=1A, dI/dt=100A/μs 5.2 Schottky Reverse Recovery Charge Qrr IF=1A, dI/dt=100A/μs 0.8 ©Silikron Semiconductor CO.,LTD. 2 0.39 http://www.silikron.com pF 10 ns nC v1.2 SSF4703 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr Vdd td(on) Vin Vgs Rgen Rl D toff tf td(off) 90% Vout VOUT 90% INVERTED 10% 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms ZθJA Normalized Transient Thermal Resistance Figure1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedanc ©Silikron Semiconductor CO.,LTD. 3 http://www.silikron.com v1.2 SSF4703 DFN2X3-8L PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Top View Bottom View COMMON DIMENSIONS(MM) PKG. W:VERY VERY THIN REF. MIN. NOM. MAX. A 0.70 0.75 0.80 A1 0.00 — 0.05 A3 Side View 0.2 REF. D 2.95 3.00 3.05 E 1.95 2.00 2.05 b L 0.25 0.30 0.35 0.25 0.35 0.45 D2 0.77 0.92 1.02 E2 0.38 0.53 0.63 e 0.65 BCS. NOTES： 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. ©Silikron Semiconductor CO.,LTD. 4 http://www.silikron.com v1.2 SSF4703 ATTENTION: ■ ■ ■ ■ ■ ■ ■ ■ ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 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Specifications and information herein are subject to change without notice. ©Silikron Semiconductor CO.,LTD. 5 http://www.silikron.com v1.2