SIRECT RSM5853P

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RSM5853P
P-Channel 20Volt (D-S) MOSFET With Schottky Diode
□ Application
-These miniature surface mount MOSFET utilize a high cell density trench
CF 1206-8 TOP VIEW
process to provide low RDS(on) and to provide low RDS(on) and to ensure
minimal power loss and heat dissipation. Typical applications are DC-DC
A
1
8
K
converters and power management in portable and battery-powered
A
2
7
K
products such as coputers, printers, PCMCIA cards, cellular and cordless
S
3
6
D
telephones.
G
4
5
D
□ Feature
S
K
D
A
-Low RDS(on) provides higger efficiency and extends battery life
G
-Low thermal impedance copper leadframe CF 1206-8 saves board space
-Fast switching speed
-High performance trench technology
□ Absolute Maximum Ratings
PARAMETER
SYMBOL
MAXIMUM
Drain-Source Voltage (MOSFET)
VDS
-20
Reverse Voltage (Schottky)
VKA
20
Gate-Source Voltage (MOSFET)
VGS
±8
Continuous Drain Current @ TJ = 150ºC (MOSFET) (Note 1)
TA = 25 ºC
TA = 70 ºC
ID
±1.9
IDM
±10
Continuous Source Current (MOSFET Diode Conduction) (Note 1)
IS
-1.6
Average Forward Current (Schottky)
IF
0.5
Pulsed Forward Current (Schottky)
IFM
8
Maximum Power Dissipation (Schottky) (Note 1)
TA = 25 ºC
TA = 70 ºC
TA = 25 ºC
PD
Steady State
Note: 1.Surface Mounted on 1” X 1” FR-4 Board
2.Pulse width limited by maximum junction temperature
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1.1
1.3
W
0.68
TJ , TSTG
t ≦ 5sec
Maximum Junction-to-Ambient
A
2.1
TA = 70 ºC
Operating Junction and Storage Temperature Range
V
±2.5
Pulsed Drain Current (MOSFET) (Note 2)
Maximum Power Dissipation (MOSFET) (Note 1)
UNIT
RθJA
-55 to +150
60
110
ºC
ºC/W
September 2008 / Rev.6.2
RSM5853P
□ MOSFET Specifications
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250μA
-0.4
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±8V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = -16V, VGS = 0V
-1
VDS = -16V, VGS = 0V, TJ = 55ºC
-10
On-State Drain Current (Note 1)
ID(on)
UNIT
STATIC
Drain-Source On-State Resistance
(Note 1)
RDS(on)
VDS = -5V, VGS = -4.5V
V
-5
nA
μA
A
VGS = -4.5V, ID = -3.6A
0.110
VGS = -2.5V, ID = -3.0A
0.160
Ω
Forward Tranconductance (Note 1)
gfs
VDS = -5V, ID = -3.6A
3
S
Diode Forward Voltage
VSD
IS = -1.6A, VGS = 0V
-0.70
V
DYNAMIC (Note 2)
Total Gate Charge
Qg
6.0
VDS = -5V, VGS = -4.5V,
ID = -3.6A
Gate-Source Charge
Qgs
0.8
Gate-Drain Charge
Qgd
1.3
Turn-On Delay Time
Td(on)
6.5
Rise Time
tr
Turn-Off Delay Times
Td(off)
Fall Time
tf
nC
20
VDD = -5V, RL = 5Ω,
VGEN = -4.5V, RG = 6Ω
nS
31
21
□ Schottky Specifications
PARAMETER
SYMBOL
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Junction Capacitance
Irm
CONDITIONS
MIN.
TYP.
MAX.
IF = 0.5A
0.48
IF = 0.5A, TJ = 125ºC
0.4
Vr = 30V
0.1
Vr = 30V, TJ = 75ºC
1
Vr = 30V, TJ = 125ºC
10
CT
Vr = 10V
Note: 1. Pulse Test : PW≦300μs duty cycle≦2%
2.Guaranteed by design, not subject to production tesing
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31
UNIT
V
mA
pF
RSM5853P
2
15
-3.0V
VGS = -4.5V
-ID, DRAIN CURRENT (A)
-2.5V
-ID, DRAIN CURRENT (A)
-3.5V
12
9
-2.0V
6
3
1.8
1.6
VGS = -2.0V
1.4
-2.5V
-3.0V
1.2
-3.5V
-4.5V
1
-1.5V
0.8
0
0
0
1
2
3
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
6
9
12
15
Figure 2. On-Resistance Variation with Drain
Current and Gate Voltage
Figure 1. On-Region Characteristics
0.22
RDS(on), ON-RESISTANCE (O)
1.4
RDS(on), NORMALIZED DRAINSOURCE ON-RESISTANCE
3
-VDS, DRAIN TO SOURCE VOLTAGE (V)
1.3
ID = -2A
VGS = -4.5V
1.2
1.1
1.0
0.9
0.8
0.7
-50
0
100
50
ID = -1A
0.18
0.14
TA = 125ºC
0.10
TA = 25ºC
0.06
0.02
150
1
TJ, JUNCTION TEMPERATURE (ºC)
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with Gate
to Source Voltage
10
VGS = 0V
-ID, DRAIN CURRENT (A)
VDS = -5V
TA = -55ºC
-IS, REVERSE DRAIN CURRENT (A)
10
25ºC
8
125ºC
6
4
2
1
TA = 125ºC
.1
25ºC
.01
-55ºC
.001
.0001
0
0.5
1
1.5
2
2.5
0
0.4
0.6
0.8
1.0
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
0.2
Figure 6. Body Diode Forward Voltage Variation with
Source Current and Temperature
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RSM5853P
1000
-VGS, GATE-SOURCE VOLTAGE (V)
5
ID = -3.5V
VDS = -5V
f = 1MHz
VGS = 0V
CISS
-10V
800
CAPACITANCE (pF)
4
-15V
3
2
600
400
1
200
0
0
COSS
CROSS
0
2
4
6
8
0
10
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qd, GATE CHARGE (nC)
Figure 8. Capacitance Characteristics
Figure 7. Gate Charge Characteristics
100
5
RDS(ON) LIMIT
10
1m
10
1
1s
0m
SINGLE PLUSE
RθJA = 156 oC/W
TA = 25 oC
4
s
ms
POWER (W)
10
s
DC
0.1
3
2
1
VGS = -4.5V
SINGLE PLUSE
RθJA = 156oC/W
TA = 25oC
0
0.1
0.01
0.1
1
10
1
100
10
SINGLE PULSE TIME (SEC)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Single Pluse Maximum Power
Dissipation
Figure 9. Maximum Safe Operating Area
1
D = 0.5
THERMAL IMPEDANCE ZthJC (C/W)
-ID, DRAIN CURRENT (A)
100µs
RθJA(t) = r(t) + RθJA
RθJA = 156oC/W
D = 0.2
0.1
D = 0.1
D = 0.05
PDM
D = 0.02
t1
t2
D = 0.01
0.01
Notes:
1.Duty factor D = t1 / t2
2.Peak Tj = PDM x ZthJC + TC
SINGLE PULSE
(THERMAL RESISTANCE)
0.001
0.0001
0.001
0.01
0.1
1
10
t1, TIME (SEC)
Figure 11. Transient Thermal Response Curve
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100
1000
100
RSM5853P
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D
L1
L
θ
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DIM
A
A1
b
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D
E
E1
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L
L1
θ
A1
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
0.027
0.036
0.70
0.90
0.000
0.002
0.00
0.03
0.009
0.014
0.24
0.35
0.003
0.010
0.08
0.25
0.118 BSC
3.00 BSC
0.079 BSC
2.00 BSC
0.067 BSC
1.70 BSC
0.026 BSC
0.65 BSC
0.008
0.016
0.20
0.40
0.000
0.004
0.00
0.10
0°
12°
0°
12°
NOTE
Sirectifier Global Corp., Delaware, U.S.A.
U.S.A.: [email protected]
France: [email protected]
Taiwan: [email protected]
Hong Kong: [email protected]
China: [email protected] …Thailand: [email protected]
Philippines: [email protected] Belize: [email protected]
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