FAIRCHILD NDS352AP

February 1997
NDS352AP
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These P -Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications
such as notebook computer power management, portable
electronics, and other battery powered circuits where fast
high-side switching, and low in-line power loss are needed in a
very small outline surface mount package.
-0.9 A, -30 V. RDS(ON) = 0.5 Ω @ VGS = -4.5 V
RDS(ON) = 0.3 Ω @ VGS = -10 V.
Industry standard outline SOT-23 surface mount package
using proprietary SuperSOTTM-3 design for superior thermal
and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
________________________________________________________________________________
D
S
G
Absolute Maximum Ratings
Symbol
Parameter
VDSS
VGSS
ID
T A = 25°C unless otherwise noted
NDS352AP
Units
Drain-Source Voltage
-30
V
Gate-Source Voltage - Continuous
±20
V
Maximum Drain Current - Continuous
±0.9
A
(Note 1a)
- Pulsed
PD
TJ,TSTG
Maximum Power Dissipation
±10
(Note 1a)
0.5
(Note 1b)
0.46
Operating and Storage Temperature Range
W
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
© 1997 Fairchild Semiconductor Corporation
NDS352AP Rev.D
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
-30
Typ
Max
Units
-1
µA
-10
µA
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = -24 V, VGS = 0 V
V
TJ =125°C
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
-1.7
-2.5
V
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
-0.8
VDS = VGS, ID = -250 µA
TJ =125°C
-0.5
VGS = -4.5 V, ID = -0.9 A
TJ =125°C
VGS = -10 V, ID = -1 A
-1.4
-2.2
0.45
0.5
0.65
0.7
0.25
0.3
-2
Ω
ID(ON)
On-State Drain Current
VGS = -4.5 V, VDS = -5 V
gFS
Forward Transconductance
VDS = -5 V, ID = -0.9 A
1.9
A
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
135
pF
88
pF
40
pF
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
td(on)
Turn - On Delay Time
tr
Turn - On Rise Time
td(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
td(on)
Turn - On Delay Time
VDD = -6 V, ID = -1 A,
VGS = -4.5 V, RGEN = 6 Ω
VDD = -10 V, ID = -1 A,
VGS = -10 V, RGEN = 50 Ω
5
10
ns
17
30
ns
35
70
ns
30
60
ns
8
15
ns
tr
Turn - On Rise Time
16
30
ns
td(off)
Turn - Off Delay Time
35
90
ns
tf
Turn - Off Fall Time
30
90
ns
Qg
Total Gate Charge
2
3
nC
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = -10 V, ID = -0.9 A,
VGS = -4.5 V
0.5
nC
1
nC
NDS352AP Rev.D
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
-0.42
A
-10
A
-1.2
V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Source Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -0.42 (Note 2)
-0.8
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
PD (t) =
T J −T A
R θJA(t)
=
T J −T A
R θJC +R θCA(t)
= I 2D (t) × R DS(ON)@T J
Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250oC/W when mounted on a 0.02 in2 pad of 2oz copper.
b. 270oC/W when mounted on a 0.001 in2 pad of 2oz copper.
1a
1b
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS352AP Rev.D
Typical Electrical Characteristics
1.6
VGS = -10V
-7.0
-6.0
-5.5
-4
R DS(on), NORMALIZED
-5.0
-4.5
-3
-4.0
-2
-3.5
-1
0
-3.0
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
-5
V GS = -3.5 V
1.4
1.2
-1
-2
V
DS
-3
-4
-4.5
-5.0
1
-5.5
-6.0
0.8
-7.0
-10
0.6
0.4
0
-4.0
-5
0
-4
-5
R DS(on), NORMALIZED
V GS = -4.5V
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
T J , JUNCTION TEMPERATURE (°C)
125
DRAIN-SOURCE ON-RESISTANCE
1.6
I D = -0.9A
TJ = 125°C
1.4
1.2
25°C
1
0.8
-55°C
0.6
0.4
V GS = -4.5V
0.2
150
0
T = -55°C
J
GATE-SOURCE THRESHOLD VOLTAGE
-4
V DS = -10V
25
-3.2
125
-2.4
-1.6
-0.8
-1
-2
-3
-4
-5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
-1
-2
I D , DRAIN CURRENT (A)
-3
-4
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
D
R DS(ON), NORMALIZED
1.6
DRAIN-SOURCE ON-RESISTANCE
-2
-3
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
I , DRAIN CURRENT (A)
-1
, DRAIN-SOURCE VOLTAGE (V)
-6
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation
with Temperature.
NDS352AP Rev.C
Typical Electrical Characteristics (continued)
4
VGS = 0V
-I , REVERSE DRAIN CURRENT (A)
ID = -250µA
1.08
1.06
1.04
1.02
1
0.98
1
T J = 125°C
0.1
0.96
0.94
-50
-25
0
25
50
75
100
T J , JUNCTION TEMPERATURE (°C)
125
150
Figure 7. Breakdown Voltage Variation with
Temperature.
-55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 8. Body Diode Forward Voltage Variation with
Source Current and Temperature.
400
10
200
Ciss
Coss
100
50
Crss
20
0 .1
0 .2
-10
-15
6
4
2
-V
V GS = 0 V
VDS = -5V
8
GS
f = 1 MHz
30
ID = -0.9A
, GATE-SOURCE VOLTAGE (V)
300
CAPACITANCE (pF)
25°C
S
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.1
-V
0 .5
1
2
5
10
, DRAIN TO SOURCE VOLTAGE (V)
20
0
30
0
1
3
4
5
, GATE CHARGE (nC)
ton
VDD
t d(on)
t off
tr
RL
VIN
g
Figure 10. Gate Charge Characteristics.
Figure 9. Capacitance Characteristics.
t d(off)
tf
90%
90%
V OUT
D
VGS
2
Q
DS
VOUT
R GEN
10%
10%
DUT
G
90%
S
V IN
50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit.
INVERTED
Figure 12. Switching Waveforms.
NDS352Ap Rev.C
20
3
V DS = - 5V
1m
s
10
-I D , DRAIN CURRENT (A)
2.5
TJ = -55°C
2
25°C
1.5
125°C
1
5
2
RD
g
0
-1
-2
-3
-4
-5
0.05
0.01
0.1
0.8
1a
1b
0.4
4.5"x5" FR-4 Board
o
TA = 25 C
Still Air
0
0.2
0m
s
s
10s
DC
0.2
0.5
1
2
5
10
20 30
50
0.3
Figure 14. Maximum Safe Operating Area.
-ID , STEADY-STATE DRAIN CURRENT (A)
STEADY-STATE POWER DISSIPATION (W)
1
0.1
10
VGS = -4.5V
SINGLE PULSE
RθJA = See Note 1b
A T = 25°C
A
0.1
D
0
10m
- VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 13. Transconductance Variation with Drain
Current and Temperature.
0.2
LI
1s
I , DRAIN CURRENT (A)
0.6
N)
0.5
0.5
0
S(O
T
MI
1
FS
, TRANSCONDUCTANCE (SIEMENS)
Typical Electrical Characteristics (continued)
1.2
1.1
1
0.9
1a
0.8
1b
4.5"x5" FR-4 Board
o
TA = 25 C
Still Air
VGS = -4.5V
0.7
0.6
0.4
0
0.1
2oz COPPER MOUNTING PAD AREA (in2 )
0.2
0.3
0.4
2
2oz COPPER MOUNTING PAD AREA (in )
Figure 16. Maximum Steady-State Drain
Current versus Copper Mounting Pad Area.
Figue 15. SuperSOTTM _ 3 Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
0.2
D = 0.5
R θJA (t) = r(t) * R θJA
R θJA = See Note 1b
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.005
P(pk)
0.02
t1
0.01
t2
TJ - TA = P * R θJA (t)
Single Pulse
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001
0.001
0.01
0.1
t 1 , TIME (sec)
1
10
100
300
Figure 17. Transient Thermal Response Curve.
Note : Characterization performed using the conditions described in note 1b. Transient thermal response will
change depending on the circuit board design.
NDS352Ap Rev.C