SIRECT STPR506D

STPR506D
Ultra Fast Recovery Diodes
Dimensions TO-220AC
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
A
C
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
STPR506D
Symbol
VRRM
V
600
VRMS
V
420
Dim.
VDC
V
600
Characteristics
@TC=100 oC
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Maximum Ratings
Unit
5.0
A
I(AV)
Maximum Average Forward Rectified Current
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
100
A
Maximum Forward Voltage At 5.0A DC
1.75
V
5
500
uA
pF
VF
o
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
CJ
Typical Junction Capacitance (Note 1)
60
TRR
Maximum Reverse Recovery Time (Note 2)
25
ROJC
@TJ=25 C
@TJ=125oC
Typical Thermal Resistance (Note 3)
3.0
TJ, TSTG Operating And Storage Temperature Range
-55 to +150
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3. Thermal Resistance Junction To Case.
FEATURES
MECHANICAL DATA
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
ns
o
C/W
o
C
STPR506D
Ultra Fast Recovery Diodes
4
3
2
1
RESISTIVE OR INDUCTIVE LOAD
0
25
50
75
100
125
150
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
5
150
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
125
100
75
50
25
0
175
1
2
5
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
20
50
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
1000
INSTANTANEOUS FORWARD CURRENT ,(A)
100
100
TJ = 125 C
10
TJ = 75 C
1.0
0.1
TJ = 25 C
0.01
10
1.0
TJ = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.1
0
20
40
60
80
100
140
120
0
0.2
0.4
0.6
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
100
TJ = 25 C, f= 1MHz
10
0.1
1
0.8
1.0
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
CAPACITANCE , (pF)
INSTANTANEOUS REVERSE CURRENT ,(uA)
10
NUMBER OF CYCLES AT 60Hz
4
10
REVERSE VOLTAGE , VOLTS
100
1.8