STPR1010CT thru STPR1020CT Ultra Fast Recovery Diodes A C A Dimensions TO-220AB A C A C(TAB) A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode STPR1010CT STPR1020CT Symbol VRRM V 100 200 VRMS V 70 140 Dim. VDC V 100 200 Characteristics I(AV) Maximum Average Forward Rectified Current IFSM Non Repetitive Peak Forward Surge Current Per Diode Sinusoidal (JEDEC METHOD) IF=5A IF=5A IF=10A IF=10A Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Maximum Ratings Unit @TC=125oC 10 A TP=10ms TP=8.3ms 50 55 A @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC 0.975 0.925 1.25 1.20 V @TJ=25oC @TJ=100oC 5 100 uA pF VF Maximum Forward Voltage Pulse Width=300us Duty Cycle IR Maximum DC Reverse Current At Rated DC Blocking Voltage CJ Typical Junction Capacitance Per Element (Note 1) 80 TRR Maximum Reverse Recovery Time (Note 2) 30 ROJC Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Typical Thermal Resistance 4.0 TJ, TSTG Operating And Storage Temperature Range -55 to +150 NOTES: 1. Measured at 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. FEATURES MECHANICAL DATA * Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacity * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any ns o C/W o C STPR1010CT thru STPR1020CT Ultra Fast Recovery Diodes 10 8 6 4 2 0 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 25 50 75 100 125 150 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 12 60 50 TP=8.3ms 40 30 TP=10ms 20 10 Single Half-Sine-Wave (JEDEC METHOD) 0 175 1 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 20 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100.0 10.0 INSTANTANEOUS FORWARD CURRENT ,(A) 100 TJ = 100 C TJ = 75 C 1.0 TJ = 25 C 0.1 0.01 .001 TJ = 125 C 10 TJ = 25 C 1.0 PULSE WIDTH 300us 300ua 2% Duty cycle 0.1 0 20 60 140 100 0 0.2 0.4 0.6 FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 100 TJ = 25 C, f= 1MHz 10 0.1 1 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(uA) 10 NUMBER OF CYCLES AT 60Hz 4 10 REVERSE VOLTAGE , VOLTS 100 1.8