SEMPO STPRF1605CT

STPRF1605CT thru STPRF1620CT
Ultra Fast Recovery Diodes
A
C
A
Dimensions TO-220AB
A
C
A
C(TAB)
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
A=Anode, C=Cathode, TAB=Cathode
STPRF1605CT
STPRF1610CT
STPRF1615CT
STPRF1620CT
Symbol
VRRM
V
50
100
150
200
VRMS
V
35
70
105
140
Dim.
VDC
V
50
100
150
200
Characteristics
@TC=100 oC
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Maximum Ratings
Unit
16
A
I(AV)
Maximum Average Forward Rectified Current
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
125
A
Maximum Forward Voltage At 8.0A DC
0.95
V
5
500
uA
pF
VF
o
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
CJ
Typical Junction Capacitance Per Element (Note 1)
110
TRR
Maximum Reverse Recovery Time (Note 2)
35
ROJC
@TJ=25 C
@TJ=100oC
Typical Thermal Resistance (Note 3)
1.5
TJ, TSTG Operating And Storage Temperature Range
ns
o
C/W
-55 to +150
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3. Thermal Resistance Junction To Case.
FEATURES
MECHANICAL DATA
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
SEMPO Electronics Ltd.
www.sempoel.com
o
C
STPRF1605CT thru STPRF1620CT
Ultra Fast Recovery Diodes
12
8
4
RESISTIVE OR INDUCTIVE LOAD
0
25
50
75
100
125
150
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
16
150
125
100
75
50
25
Single Half-Sine-Wave
(JEDEC METHOD)
0
1
175
2
5
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
20
50
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100.0
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS REVERSE CURRENT ,(uA)
10
NUMBER OF CYCLES AT 60Hz
TJ = 125 C
10.0
TJ = 100 C
TJ = 75 C
1.0
TJ = 25 C
0.1
.01
TJ = 125 C
50-200V
10
300-400V
500-600V
1.0
TJ = 25 C
PULSE WIDTH 300us
300ua
2% Duty cycle
0.1
0
20
40
60
80
140
120
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
1000
50-400V
100
500-600V
TJ = 25 C, f= 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
SEMPO Electronics Ltd.
www.sempoel.com