SIRECT STPR810DB

STPR805DB thru STPR820DB
Ultra Fast Recovery Diodes
Dimensions TO-220AC
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
A
C
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
STPR805DB
STPR810DB
STPR815DB
STPR820DB
VRRM
V
50
100
150
200
VRMS
V
35
70
105
140
Symbol
Dim.
VDC
V
50
100
150
200
Characteristics
@TC=125 oC
I(AV)
Maximum Average Forward Rectified Current
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Maximum Ratings
Unit
8.0
A
100
A
VF
Maximum Forward
Voltage
IF=8A
@TJ=25oC
@TJ=150oC
1.3
0.8
V
IR
Maximum DC Reverse Current
At Peak Reverse Voltage
@TJ=25oC
@TJ=100oC
10
500
uA
CJ
Typical Junction Capacitance (Note 1)
45
pF
TRR
Maximum Reverse Recovery Time (Note 2)
25
ROJC
Typical Thermal Resistance (Note 3)
3.0
TJ, TSTG Operating And Storage Temperature Range
-55 to +150
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3. Thermal Resistance Junction To Case.
FEATURES
MECHANICAL DATA
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
ns
o
C/W
o
C
STPR805DB thru STPR820DB
Ultra Fast Recovery Diodes
WITH HEATSINK TC
8
6
FREE AMBIENT TA
4
2
RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
10
150
125
100
75
50
25
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
150
1
2
5
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
20
50
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100.0
10.0
INSTANTANEOUS FORWARD CURRENT ,(A)
100
TJ = 125 C
TJ = 100 C
1.0
TJ = 25 C
0.1
0.01
10
TJ = 150 C
TJ = 25 C
1.0
PULSE WIDTH 300us
2% Duty cycle
0.1
0.001
0
20
40
60
80
100
140
120
0
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0.2
0.4
0.6
FIG.5 - TYPICAL JUNCTION CAPACITANCE
100
TJ = 25 C, f= 1MHz
10
0.1
1
0.8
1.0
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
1000
CAPACITANCE , (pF)
INSTANTANEOUS REVERSE CURRENT ,(uA)
10
NUMBER OF CYCLES AT 60Hz
4
10
REVERSE VOLTAGE , VOLTS
100
1.8