SIRENZA SBW

Product Description
The SBW-5089(Z) is a high performance InGaP/GaAs HBT MMIC
Amplifier. A Darlington circuit fabricated with InGaP process
technology provides broadband RF performance up to 8 GHz and
excellent thermal performance. The heterojunction increases
breakdown voltage and minimizes leakage current between junctions.
Cancellation of emitter junction non-linearities results in high
suppression of intermodulation products. Operation requires only a
single positive voltage supply, 2 DC-blocking capacitors, a bias resistor
and an RF choke.
The matte tin finish on Sirenza’s lead-free “Z” package is applied
using a post annealing process to mitigate tin whisker formation and
is RoHS compliant per EU Directive 2002/95. The package body is
manufactured with green molding compounds that contain no
antimony trioxide or halogenated fire retardants.
Gain & Return Loss vs. Frequency
ID= 80 mA (Typ.) Tuned Application Circuit (fig.1)
25
0
-5
Gain (dB)
Gain
15
-10
ORL
10
-15
IRL
5
Return Loss (dB)
20
-25
0
1
2
3
4
5
6
7
RoHS Compliant
& Green Package
Pb
DC-8 GHz Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
• Available in Lead Free, RoHS Compliant
•
•
•
•
•
•
green package ( Z Suffix )
50 Ohm Cascadable Gain Block
Wideband Flat Gain to 3 GHz: +/-1.4dB
P1dB = 13.4 @ 6 GHz
Input / Output VSWR < 2:3 to 8 GHz
Patented Thermal Design
Single Voltage Supply Operation
Applications
• Wideband Instrumentation
• Fiber Optic Driver
• OC-48
• Basestation
• SAT COM
-20
0
SBW-5089
SBW-5089Z
8
Frequency (GHz)
Symbol
G
Parameter
Small Si gnal Gai n
( PC board and connector losses de-embeded )
U nits
Frequency
Min.
Typ.
Max.
dB
850 MHz
3000 MHz
4200 MHz
6000 MHz
19.3
17.0
21.3
19.0
14.5
20.3
18.0
17.2
15.5
18.4
20.1
19.4
32.0
35.5
34.0
P 1dB
Output Power at 1dB C ompressi on
dB m
850 MHz
1950 MHz
OIP3
Output Thi rd Order Intercept Poi nt
dB m
850 MHz
1950 MHz
Pout
Output Power @ -45dBc AC P IS-95
9 Forward C hannels
dB m
1950MHz
Bandwi dth D etermi ned by Return Loss (>10dB)
MHz
IRL
16.5
13.0
6000
Worst case Input Return Loss
dB
D C -6000MHz
7
10
Worst case Output Return Loss
dB
D C -6000MHz
8
10
NF
Noi se Fi gure
dB
1950 MHz
3.9
4.4
VD
D evi ce Operati ng Voltage
V
4.5
4.9
5.3
ID
D evi ce Operati ng C urrent
mA
72
80
88
ORL
RTH, j-l
Thermal Resi stance (juncti on to lead)
Test Conditions:
VS = 8 V ID = 80 mA Typ.
Bias Resistance = 39 Ohms
°C /W
OIP3 Tone Spacing = 1 MHz
Pout per tone = 0 dBm
70
TL = 25ºC
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information
shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or
warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 South Technology Court
Broomfield, CO 80021
EDS-103325 Rev. C
1
Phone: (800) SMI-MMIC
http://www.sirenza.com
SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Symbol
G
Parameter
Small Signal Gain
500
850
1950
2400
3500
5800
dB
20.5
20.3
19.1
18.7
17.3
15.1
OIP3
Output Third Order Intercept Point
dB m
36.5
35.5
34.0
33.0
30.5
25.5
P 1dB
Output Power at 1dB Compression
dB m
20.2
20.1
19.4
19.4
17.5
13.4
IRL
Input Return Loss
dB
26
26
19
15
12
12.5
ORL
Output Return Loss
dB
19
17.5
12
11
10.5
10.9
S 12
Reverse Isolation
dB
22
23
23
23
23
23
NF
Noise Figure
dB
3.6
3.6
3.9
3.9
4.1
4.3
VS = 8 V
ID = 80 mA Typ.
Bias Resistance = 39 Ohms
Test Conditions:
*
Frequency (MHz )
Units
OIP3 Tone Spacing = 1 MHz
Pout per tone = 0 dBm
TLEAD = 25ºC
ZS = ZL = 50 Ohms
5.8GHz data measured with tuned app circuit in fig. 2.
Absolute Maximum R atings
P1dB vs. Frequency
P1dB (dBm)
26
Parameter
Absolute Limit
Max. D evi ce C urrent (ID)
130 mA
23
Max. D evi ce Voltage (VD)
6V
20
Max. RF Input Power
+17 dBm
Max. Operati ng D i ssi pated Power
0.65 W
17
14
11
-40°C
+85°C
5
0
1
2
3
4
Frequency(GHz)
5
+150°C
-40°C to +85°C
Max. Storage Temp.
+150°C
Operati on of thi s devi ce beyond any one of these li mi ts may
cause permanent damage. For reli able conti nous operati on,
the devi ce voltage and current must not exceed the maxi mum
operati ng values speci fi ed i n the table on page one.
+25°C
8
Max. Juncti on Temp. (TJ)
Operati ng Temp. Range (TL)
6
Bi as condi ti ons should also sati sfy the followi ng expressi on:
IDVD < (TJ - TL) / RTH, j-l
OIP3 vs. Frequency
Noise Figure vs. Frequency
39
6
36
5
30
4
NF (dB)
OIP3 (dBm)
33
27
24
21
3
2
-40°C
18
-40°C
1
+25°C
15
+25°C
+85°C
+85°C
12
0
0
1
303 South Technology Court
Broomfield, CO 80021
2
3
4
Frequency (GHz)
5
6
0
EDS-103325 Rev. C
2
1
2
3
4
Frequency (GHz)
5
6
Phone: (800) SMI-MMIC
http://www.sirenza.com
SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier
Typical RF Performance Over Lead Temperature In Basic Application Circuit (Fig.2)
|S | vs. Frequency
21
25
|S | vs. Frequency
11
0
-5
20
-10
|S11| (dB)
|S21| (dB)
( Bias: ID= 80 mA Typ.)
15
10
-40°C
+25°C
+85°C
5
-15
-20
-25
-40°C
+25°C
+85°C
-30
-35
-40
0
0
1
2
3
4
5
6
7
8
9
0
10
1
2
4
5
6
7
8
9
10
9
10
Frequency (GHz)
Frequency (GHz)
|S | vs. Frequency
12
-10
3
|S | vs. Frequency
22
0
-5
-40°C
+25°C
+85°C
-10
|S22| (dB)
|S12| (dB)
-15
-20
-25
-15
-20
-25
-30
-40°C
+25°C
+85°C
-35
-30
-40
0
1
2
3
4
5
6
7
8
9
10
0
1
2
Frequency (GHz)
3
4
5
6
7
8
Frequency (GHz)
NOTE: Full S-parameter data available at www.sirenza.com
IS-95 @ 850MHz
Adj. Channel Pwr. vs. Channel output Pwr.
-30
-35
-35
-40
-40
-45
-45
dBc
dBc
-30
-50
-55
-40°C
+25°C
+85°C
-60
-65
-70
IS-95 @ 1950MHz
Adj. Channel Pwr. vs. Channel Output Power
-50
-55
-40°C
+25°C
+85°C
-60
-65
-70
6
8
10
12
14
16
6
dBm
303 South Technology Court
Broomfield, CO 80021
EDS-103325 Rev. C
3
8
10
dBm
12
14
16
Phone: (800) SMI-MMIC
http://www.sirenza.com
SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier
Typical RF Performance Over Lead Temperature In Tuned Application Circuit (Fig.1)
|S | vs. Frequency
21
25
11
-10
|S11| (dB)
|S21| (dB)
|S | vs. Frequency
0
20
15
10
-20
-40°C
+25°C
+85°C
-30
-40°C
+25°C
+85°C
5
0
-40
0
1
2
3
4
5
6
7
8
9
0
10
1
2
3
|S | vs. Frequency
12
-10
-40°C
+25°C
+85°C
|S22| (dB)
-30
-30
-40
3
4
5
6
7
8
9
10
22
-20
-25
2
6
-10
-20
1
5
|S | vs. Frequency
0
-15
0
4
Frequency (GHz)
Frequency (GHz)
|S12| (dB)
( Bias: ID= 80 mA Typ.)
7
8
9
10
-40°C
+25°C
+85°C
0
1
2
3
Frequency (GHz)
4
5
6
7
8
9
10
Frequency (GHz)
NOTE: Full S-parameter data available at www.sirenza.com
4
RF in
1
SBW-5089
2
BW5
IN
C1
3
Ω Elec. Len. = 13.1
Zθ
θ = 50Ω
RF out
C1
C1 = 0.1pF 0805 AVX
OUT
SIRENZA MICRODEVICES
ECB-100607 Rev B
Substrate Material = Getek ML200C,
0 .031" thick, Er = 4.2, 1oz. cladding
Copper Shims
Figure 1. Tuned Application Circuit
303 South Technology Court
Broomfield, CO 80021
EDS-103325 Rev. C
4
Phone: (800) SMI-MMIC
http://www.sirenza.com
SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier
Fig. 2 Basic Application Circuit
RBIAS
Application Circuit Element Values
ID
VS
1000
pF
1 uF
100
RLDC
CD
Bias
Inductor
LC
1
SW-5089
3
VD
2
CB
500
850
1950
2400
3500
CB
1000 pF
220 pF 100 pF
68 pF
56 pF
39 pF
CD
100 pF
100 pF
68 pF
22 pF
22 pF
15 pF
LC
470 nH
68 nH
33 nH
22 nH
18 nH
15 nH
Recommended Bias Resistance for ID = 80 mA
4
RF in
Frequency (Mhz )
Reference
Designator
RF out
CB
Supply Voltage (VS )
(Volts)
<7
7
7.5
8
9
10
12
Bias Resistance*
(Ohms)
N/R
26
33
39
52
64
89
* Bias Resistance = RBIAS+ RLDC = ( VS-VD ) / ID
Select RBIAS so that RBIAS + RLDC ~ the recommended bias resistance.
Use 1% or 5 % tolerance resisistors or parallel combinations to attain the
recommended bias resistance +/- 3%. RBIAS provides current stability over
temperature.
VS
RBIAS
1 uF
1000 pF
* N/R= No t Re c o m m e nd e d . C o nta c t S i r e nza te c hni c a l s up p o r t fo r
guidance when available supply voltage is <7 V.
CD
BW5
Device Pin Out Guide
LC
Pin #
Description
1
RF IN
RF input pin. This pin requires the use of an
external DC blocking capacitor chosen for
the frequency of operation.
2, 4
GND
Connection to ground. Provide via holes as
close to the device ground leads as possible
to reduce ground inductance and achieve
optimum RF performance.
3
RF OUT /
DC BIAS
RF output and bias pin. This pin requires the
use of an external DC blocking capacitor
chosen for the frequency of operation.
CB
CB
Function
Part Identification Marking
2
3
1
2
3
3
1
The product qualification report may be dow nloaded at
w w w.sirenza.com
BW5Z
2
MSL 1
BW5
1
Moisture Sensitivity Level
4
3
Rating
Class 1C
1
Parameter
ESD Rating - Human Body Model (HBM)
4
2
Reliability & Qualification Information
Lead Free
RoHs Compliant
Tin-Lead
Part Ordering Information
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
303 South Technology Court
Broomfield, CO 80021
Part
Number
P ackag e / L ead
Composition
R eel
Siz e
Devices
/ R eel
SBW-5089
Tin-Lead
7"
1000
SBW-5089Z
Lead Free, RoHs Compliant
7"
1000
EDS-103325 Rev. C
5
Phone: (800) SMI-MMIC
http://www.sirenza.com
SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier
SOT-89 PCB Pad Layout
Dimensions in inches [millimeters]
RF
IN
RF
OUT
Notes:
1 Solder the copper pad on the backside of the device
package to the ground plane.
2 Provide a large ground pad area under device pins 1,
2, 4, & 5 with many plated via holes as shown.
3 Dimensions given for 50 Ohm RF I/O lines are for 31
mil thick Getek. Scale accordingly for different board
thicknesses and dielectric contants.
4. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick
Getek with 1 ounce copper on both sides.
SOT-89 Nominal Package Dimensions
Dimensions in inches [millimeters]
A link to the SOT-89 package outline drawing with full dimensions and
tolerances may be found on the product web page at www.sirenza.com.
303 South Technology Court
Broomfield, CO 80021
EDS-103325 Rev. C
6
Phone: (800) SMI-MMIC
http://www.sirenza.com