DD211 Version Issue Date File Name Total Pages : A.001 : 2002/12/03 : SP-DD211-A.001.doc : 11 A DRIVER, CHARGE PUMP FOR HIGH FORWARD-VOLTAGE LEDS WITH LOW SUPPLY VOLTAGE (2.0V~3.3V) 新竹市科學園區展業一路九號七樓之一 SILICON TOUCH TECHNOLOGY INC. No. 9, 7F-1 Chan-Yeh Road 1 Science-Based Industrial Park Tel：886-3-5645656 Fax：886-3-5645626 點晶科技股份有限公司 DD211 SILICON TOUCH TECHNOLOGY INC. DD211 A DRIVER, CHARGE PUMP FOR HIGH FORWARD-VOLTAGE LEDS WITH LOW SUPPLY VOLTAGE General Description DD211 is designed specifically for driving a high forward-voltage LED as a light source with low supply voltage. Like a charge pump, DD211 doubles the supply voltage, but only requires one external component, a capacitor. The built-in oscillator generates a 75% duty-cycle and 350kHz-frequency clock. DD211 also consumes little power with CMOS integrated circuits. DD211 comes in a small die that makes packaging it within a LED module be easy. DD211’s small package, SOT25 occupies only little area for portable device, such as a handset. Features Low supply voltage, 2.0V~3.3V Only one external component, a capacitor needed Built-in resistor to limit the output current Low quiescent supply current It is easy to package DD211 within a LED module Applications High forward-voltage LED Indicators’ drivers High forward-voltage LED Back lighters for low-voltage wireless handsets SP-DD211-A.001.doc -1- Version：A.001 點晶科技股份有限公司 DD211 SILICON TOUCH TECHNOLOGY INC. Pad Descriptions PAD NAME DESCRIPTIONS VDD Power VSS Ground CP Positive Node of the External Capacitor CN Negative Node of the External Capacitor LEDA Anode of the External LED The Block Diagram and The Application Circuit Power DD211 VDD Rin OSC Charge Pump LEDA hv VSS Ground CN CP Ground _ + Cext Absolute Maximum Ratings (Unless otherwise noted, TA = 25 °C ) Characteristic Symbol Rating Unit VDD - VSS -0.5 ~ 3.6 V Output Sourcing Current IDD 100 mA Operating Temperature Range TOPR -40 ~ 85 °C Storage Temperature Range TSTG -55 ~ 150 °C Supply Voltage SP-DD211-A.001.doc -2- Version：A.001 點晶科技股份有限公司 DD211 SILICON TOUCH TECHNOLOGY INC. Recommended Operating Conditions ITEM Supply Voltage External Capacitance SYMBOL MIN. TYP. MAX. UNIT VDD - VSS 2.0 2.5 3.3 V Cext - 0.10 - uF Electrical Characteristics ( TA= 25°C, VDD= 2.5V ) Characteristic Operating Current Output Current for ‘ON’ Cycle Time-Average Output Current Output Voltage for ‘ON’ Cycle Output Voltage for ‘OFF’ Cycle Frequency of the Internal Oscillator Duty Cycle of the Internal Oscillator Symbols IDD IFON IFAVG VLEDAON VLEDAOFF Condition No external LED, Cext=0.1uF VF of external LED=3.5V Cext=0.1uF VF of external LED=3.5V Cext=0.1uF No external LED, Cext=0.1uF No external LED, Cext=0.1uF Min. Typ. Max. Unit - - 0.75 mA 23 30 37 mA 17.25 22.5 27.75 mA - 5.0 - V - 2.5 - V Freq Cext=0.1uF - 350 - kHz Dt Cext=0.1uF - 75 - % SP-DD211-A.001.doc -3- Version：A.001 點晶科技股份有限公司 DD211 SILICON TOUCH TECHNOLOGY INC. Functional Descriptions DD211 is designed to drive a high forward-voltage LED as a light source with low supply voltage. As Fig.a shown, when the power is on, DD211 will double the supply voltage to drive the external LED with 75% duty cycle. The built-in resistor of DD211 is used to limit the driving current. VLEDA LEDA CP + Fig.a Cext hv IF DD211 _ CN VSS Ground Ground VDD Power IFON IF 2VDD VLEDA Dt (Without LED) VDD 1/Freq Test Circuits As Fig.a shown. SP-DD211-A.001.doc -4- Version：A.001 點晶科技股份有限公司 DD211 SILICON TOUCH TECHNOLOGY INC. Typical Operating Characteristics (Typical Operation Circuit with Cext=0.1uF, TA=25 °C, unless otherwise noted) Fig.b Fig.c Typical Power Consumption v.s. VF 400 80.00 350 70.00 60.00 Fig.e 250 60.00 200 50.00 150 IFon( mA) VDD=2.0V VDD=2.5V 100 Typical IFon v.s. Tj For VF=2.5V 40.00 VDD=2.0V 30.00 VDD=2.5V 20.00 10.00 0 80 100 60 40 Tj( 'C) Tj( 'C) Fig.f 20 0 -40 100 80 60 40 20 0 -20 -40 0.00 -20 Typical Power Consumption v.s. Tj For VF=3.5V Fig.g 400 90.00 350 80.00 Typical IFon v.s. Tj For VF=3.5V 70.00 300 IFon( mA) VDD=2.0V 250 VDD=2.5V 200 VDD=3.0V 150 VDD=3.3V 100 60.00 VDD=2.0V 50.00 VDD=2.5V 40.00 VDD=3.0V 30.00 VDD=3.3V 80 100 60 40 Tj( 'C) Tj( 'C) SP-DD211-A.001.doc 0 -40 100 80 60 40 20 0 -20 0.00 -40 10.00 0 -20 20.00 50 20 Power( mW) Typical Power Consumption v.s. Tj For VF=2.5V 50 Power( mW) 6.2 VF( Volt) VF( Volt) Fig.d 5 VDD=3.3V 2 6 6.4 5.6 5.2 4.8 4 0.00 4.4 10.00 0 3.6 50 3.2 20.00 2.8 100 2 VDD=3.0V 30.00 5.6 VDD=3.3V 4.4 150 VDD=2.5V 40.00 3.8 VDD=3.0V VDD=2.0V 50.00 3.2 VDD=2.5V 200 2.6 IFon( mA) VDD=2.0V 250 2.4 Power( mW) 300 Typical IFon v.s. VF -5- Version：A.001 點晶科技股份有限公司 DD211 SILICON TOUCH TECHNOLOGY INC. Typical Operating Characteristics (Continued) (Typical Operation Circuit with Cext=0.1uF, TA=25 °C, unless otherwise noted) Typical Power Consumption v.s. Tj For VF=4.5V Fig.i 60.00 250 50.00 VDD=3.3V Tj( 'C) Fig.j 80 100 60 -40 100 80 60 0.00 40 0 20 10.00 0 VDD=3.0V 20.00 50 -20 VDD=2.5V 30.00 40 VDD=3.3V 100 40.00 0 VDD=3.0V Typical IFon v.s. Tj For VF=4.5V 20 VDD=2.5V 150 -20 200 IFon( mA) 300 -40 Power( mW) Fig.h Tj( 'C) Typical Power Consum ption v.s. Tj For VF=5.5V Fig.k 160 Typical IFon v.s. Tj For VF=5.5V 30.00 140 25.00 IFon( mA) 100 VDD=3.0V 80 VDD=3.3V 60 40 20.00 VDD=3.0V 15.00 VDD=3.3V 10.00 5.00 20 80 100 60 40 0 20 -40 80 60 40 0 20 -20 100 Tj( 'C) Tj( 'C) SP-DD211-A.001.doc -20 0.00 0 -40 Power( mW) 120 -6- Version：A.001 點晶科技股份有限公司 DD211 SILICON TOUCH TECHNOLOGY INC. DIE CONFIGURATION (494.9, 532.9) VDD LEDA (284.15, 452.2) (414.15, 452.2) CN VSS CP (284.15, 182.6) (414.2, 182.6) (142.95, 124.05) (0.0, 0.0) Unit: um Die Size: 494.9um * 532.9um Width of Cut Line: 100um Die Thickness: 12mil(=300um) Pad Size: 100um * 100um SP-DD211-A.001.doc -7- Version：A.001 點晶科技股份有限公司 DD211 SILICON TOUCH TECHNOLOGY INC. * Note: SiTI reserves the right to improve the device geometry and manufacturing processes without prior notice. Though these improvements may result in slight geometry changes, they will not affect die electrical limits, pad layouts. WAFER INFORMATION Material: Silicon with P-Substrate Diameter: 6 inches(≒15cm) Thickness: 12 mils(≒300um) Pin Assignment (SOT-25) CN CP VSS LEDA VDD Pin NO. Pin Name 1 CN Connected to Negative node of the external capacitor 2 VSS Ground 3 VDD Power 4 LEDA Connected to Anode of the external LED 5 CP SP-DD211-A.001.doc Description Connected to Positive node of the external capacitor -8- Version：A.001 點晶科技股份有限公司 DD211 SILICON TOUCH TECHNOLOGY INC. Package Specifications (SOT-25) C E H L e θ1 D A A2 A1 b SYMBOL SP-DD211-A.001.doc DIMENSIONS IN MILLIMETERS MIN NOM MAX A A1 1.00 0.00 1.10 － 1.30 0.10 A2 b C D E e 0.70 0.35 0.10 2.70 1.40 － 0.80 0.40 0.15 2.90 1.60 1.90(TYP) 0.90 0.50 0.25 3.10 1.80 － H L 2.60 0.37 2.80 － 3.00 － θ1 1° 5° 9° -9- Version：A.001 點晶科技股份有限公司 DD211 SILICON TOUCH TECHNOLOGY INC. The products listed herein are designed for ordinary electronic applications, such as electrical appliances, audio-visual equipment, communications devices and so on. Hence, it is advisable that the devices should not be used in medical instruments, surgical implants, aerospace machinery, nuclear power control systems, disaster/crime-prevention equipment and the like. Misusing those products may directly or indirectly endanger human life, or cause injury and property loss. Silicon Touch Technology, Inc. will not take any responsibilities regarding the misusage of the products mentioned above. Anyone who purchases any products described herein with the above-mentioned intention or with such misused applications should accept full responsibility and indemnify. Silicon Touch Technology, Inc. and its distributors and all their officers and employees shall defend jointly and severally against any and all claims and litigation and all damages, cost and expenses associated with such intention and manipulation. SP-DD211-A.001.doc -10- Version：A.001