SS6804 Three/Four-cell Lithium-Ion Battery Protection IC FEATURES DESCRIPTION Ultra-low quiescent current, 17µA (4-cell, Vcell = 3.5V). Ultra-low power-down current, 2.2µA (4-cell, Vcell = 2.3V). Wide supply voltage range: 2V to 18V. Precision over-charge protection voltage: 4.35V±30mV for the SS6804A 4.30V±30mV for the SS6804B 4.25V±30mV for the SS6804C 4.20V±30mV for the SS6804D Externally set over-charge, over-discharge and over-current delay time. Built-in cell-balancing bleeding network under over-charge condition. Three detection levels for over-current protection. The SS6804 is designed to protect a lithium-ion battery from damage or degraded lifetime due to over-charging, over-discharging and over-current for three- or four-cell lithium-ion battery powered systems such as notebook PCs. It provides the cell-balancing "bleeding" function to automatically discharge the over-charged cell until the over-charge condition is eliminated. Safe charging with full utilization is ensured by the accurate ±30mV over-charge detection. Four different specification values for over-charge protection voltage are provided for various protection requirements. The very low standby current represents little drain from the cell while in storage. APPLICATIONS Protection IC for three/four-cell lithium-ion battery packs. TYPICAL APPLICATION CIRCUIT R8 1K NSL VCC R1 16 200 C1 0.1µF 2 UD1 15 OC 3 CS VC1 2K UD2 13 VC2 12 6 CTI 2.2nF UD3 11 10 TI 7 TC CTC 82nF 8 C4 UD4 9 BAT1 BAT2 2K FUSE BATT+ R5 1M R6 1M BAT3 R7 1M R4 VC3 GND SSM4435M M2 R3 C3 0.1µF CTD 82nF M1 R2 14 C2 0.1µF 4 OD 5 TD SSM4435M 2N3906 Q1 1 33K 0.1µF BAT4 SS6804 BATT- Protection Circuit for Four-Cell Lithium-Ion Battery Pack 12/29/2003 Rev.2.02 www.SiliconStandard.com 1 of 12 SS6804 ORDERING INFORMATION PIN CONFIGURATION SS6804XCXXX Packing type TR: Tape and reel TB: Tube TOP VIEW Package type S: SO-16 Over-charge Protection Voltage A: 4.35V B: 4.30V C: 4.25V D: 4.20V NSL 1 16 VCC OC 2 15 UD1 CS 3 14 VC1 OD 4 13 UD2 TD 5 12 VC2 TI 6 11 UD3 TC 7 10 VC3 9 GND 8 UD4 Example: SS6804ACSTR $4.35V version, in SO-16, shipped on tape and reel ABSOLUTE MAXIMUM RATINGS !""#$ DDDDDD' $"" * DDDDDDDD' ("$4-"%$DDDDDD,°EF,° !$4-"%$DDDDDC°E° TEST CIRCUIT ROC 1M IOC S1 1 2 VOC VCC 16 NSL OC UD1 15 R8 3 VCS 1K 4 VOD VC1 14 CS OD 5 TD 13 VC2 12 6 TI UD3 11 CTI 2.2nF 7 TC CTC 1nF 8 IUD1 R1 200 C1 0.1µF VC3 GND 10 UD4 9 VCC IC1 R2 2K UD2 CTD 1nF ICC IUD2 C2 0.1µF IC2 IUD3 R3 2K C3 0.1µF IC3 IUD4 VC1 R4 33K C4 0.1µF VC2 VC3 SS6804 12/29/2003 Rev.2.02 www.SiliconStandard.com 2 of 12 SS6804 ELECTRICAL CHARACTERISTICS PARAMETER (TA=25°C, unless otherwise specified.) TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT VCC Pin Input Current in Normal VCELL=3.5V Mode ICC 17 26 µA VC1 Pin Input Current in Normal VCELL=3.5V Mode IC1 0.7 1.8 µA VC2 Pin Input Current in Normal VCELL=3.5V Mode IC2 0.4 1.0 µA VC3 Pin Input Current in Normal VCELL=3.5V Mode IC3 0.2 0.5 µA Vcc Pin Input Current in PowerDown Mode VCELL=2.3V ICC(PD) 2.2 4.0 µA VC1,VC2,VC3 Input Current in Power-Down Mode VCELL=2.3V IC(PD) 0.01 0.15 µA SS6804A SS6804B Overcharge Protection Voltage 4.32 4.35 4.38 4.27 4.30 4.33 4.22 4.25 4.28 VOCP SS6804C SS6804D V 4.17 4.20 4.23 Overcharge Hysteresis Voltage VHYS 150 200 250 mV Overdischarge Protection Voltage VODP 2.27 2.40 2.53 V Overdischarge Release Voltage VODR 2.85 3.00 3.15 V VOIP 135 150 165 mV TOC 10 21 32 mS TOD 10 21 32 mS TOI1 7 15 23 mS Overcurrent Protection Voltage Overcharge Delay Time VCELL=3.5V VCELL1=VOCP - 30mV →VOCP+30mV VCELL2= VCELL3= VCELL4= 3.5V, CTC=1nF VCELL1= 2.5V→ 2.3V Overdischarge Delay Time Overcurrent Delay Time (1) 12/29/2003 Rev.2.02 VCELL2= VCELL3= VCELL4= 3.5V, CTD=1nF VCELL= 3.5V,0.15V<VCC VCS <0.3V,CTI=2.2nF www.SiliconStandard.com 3 of 12 SS6804 ELECTRICAL CHARACTERISTICS (Continued) PARAMETER Overcurrent Delay Time (2) TEST CONDITIONS VCELL=3.5V, 0.3V<VCC-VCS<1.0V SYMBOL MIN. TYP. MAX. UNIT TOI2 2 4 6 mS Overcurrent Delay Time (3) VCELL=3.5V, VCC– VCS>1.0V TOI3 150 300 450 µS OC Pin Sink Current VCELL1=4.4V, VCELL2= VCELL3= VCELL4=3.5V, OC Pin Short to VCC IOC 2.2 3.2 4.2 mA OD Pin Output “H” Voltage VDH OD Pin Output “L” Voltage VDL Charge Detection Threshold Voltage VCELL=2.3V UD1 Pin Cell-Balancing Bleeding Current VCELL1=4.4V, UD2 Pin Cell-Balancing Bleeding Current VCELL2=4.4V, UD3 Pin Cell-Balancing Bleeding Current VCELL3=4.4V, UD4 Pin Cell-Balancing Bleeding Current VCELL4=4.4V, VCELL2= VCELL3= VCELL4=3.5V VCELL1= VCELL3= VCELL4=3.5V VCELL1= VCELL2= VCELL4=3.5V VCELL1= VCELL2= VCELL3=3.5V V VCC-0.15V VCC-0.03V 0.01 VCH 0.15 VCC+0.4 VCC+0.55 V V IUD1 6.5 9.3 12.1 mA IUD2 6.3 9.0 11.7 mA IUD3 6.2 8.8 11.4 mA IUD4 6.4 9.2 12.0 mA Note: VCELL means the battery cell voltage. Therefore, VCELL1 = VCC – VC1 VCELL2 = VC1 – VC2 VCELL3 = VC2 – VC3 VCELL4 = VC3 12/29/2003 Rev.2.02 www.SiliconStandard.com 4 of 12 SS6804 TYPICAL PERFORMANCE CHARACTERISTICS 2.2 Vcc Pin Power-Down Current (µA) 22 Vcc Pin Input Current (µA) TA=25°C 20 18 16 14 10.4 11.2 12.0 12.8 13.6 14.4 15.2 1.8 1.6 1.4 1.2 1.0 16.0 TA=25°C 2.0 6.0 VCELL =3.5V 20 18 16 14 -20 7.2 7.6 8.0 8.4 8.8 9.2 -10 0 10 20 30 40 50 60 2.8 2.6 VCELL=2.3V 2.4 2.2 2.0 1.8 1.6 -20 70 SS6804C 4.28 4.26 4.24 4.22 0 20 40 60 70 Temperature (°C) Fig. 5 Overcharge Protection Voltage vs. Temperature 12/29/2003 Rev.2.02 Overdischarge Protection Voltage (V) 4.30 -20 -10 0 10 20 30 40 50 60 70 -10 0 10 20 30 40 50 60 70 Temperature (°C) Fig. 4 Vcc Pin Power-Down Current vs. Temperature Temperature (°C) Fig. 3 Vcc Pin Input Current vs. Temperature Overcharge Protection Voltage (V) 6.8 3.0 Vcc Pin Power-Down Current (uA) Vcc Pin Input Current (µA) 22 4.20 6.4 Supply Voltage (V) Fig. 2 Vcc Pin Power-Down Current vs. Supply Voltage Supply Voltage (V) Fig. 1 Vcc Pin Input Current vs. Supply Voltage 2.42 2.41 2.40 2.39 2.38 2.37 2.36 -20 Temperature (°C) Fig. 6 Overdischarge Protection Voltage vs. Temperature www.SiliconStandard.com 5 of 12 SS6804 Overcurrent Protection Voltage (V) 152.0 151.5 VCELL=3.5V 151.0 150.5 150.0 149.5 149.0 148.5 148.0 -20 -10 0 10 20 30 40 50 60 70 Temperature(°C) Fig. 7 Overcurrent Protection Voltage vs. Temperature Overcharge/Overdischarge Delay Time (mS) TYPICAL PERFORMANCE CHARACTERISTICS (continued) Overcharge Release Voltage (V) Overcurrent Delay Time 1 (mS) VCELL =3.5V 18 16 14 12 10 -20 CTC /CTD=1nF 24 22 20 18 16 14 -20 -10 0 10 20 30 40 50 60 70 Temperature(°C) Fig. 8 Overcharge/Overdischarge Delay Time vs. Temperature 4.08 22 20 26 -10 0 10 20 30 40 50 60 70 Temperature (°C) Fig. 9 Overcurrent Delay Time 1 vs. Temperature 4.07 4.06 4.05 4.04 4.03 4.02 -20 -10 0 10 20 30 40 50 60 70 Temperature (°C) Fig. 10 Overcharge Release Voltage vs. Temperature Overdischarge Release Voltage (V) 3.01 3.00 2.99 2.98 2.97 -20 -10 0 10 20 30 40 50 60 Temperature o(°C) Fig. 11 Overdischarge Release Voltage vs. Temperature 12/29/2003 Rev.2.02 70 www.SiliconStandard.com 6 of 12 SS6804 BLOCK DIAGRAM CS 3 VCC VC1 VC2 VC3 UD1 16 14 Battery Voltage Sense Circuit 12 Wake-Up Control VCC+0.4V VCC-0.15V 10 Overcurrent Delay Circuit 15 300 VCC-0.3V 4 UD2 13 OD VCC-1V 350 UD3 11 Overdischarge Delay Circuit 400 UD4 Power-Down Control 2 OC Overcharge Delay Circuit 9 450 1.2V GND 8 7 TC 5 6 TD TI PIN DESCRIPTIONS PIN 1: NSL- Input pin for cell number selection. Connect this pin to VCC for three-cell application and to GND for four-cell application. PIN 2: OC- NMOS open drain output for control of the charge control MOSFET M2. When overcharge occurs, this pin sinks current to switch the external PNP Q1 on, and charging is inhibited by turning off the charge control MOSFET M2. PIN 3: CS- 12/29/2003 Rev.2.02 Input pin for current sensing. Using the drain-source voltage of the discharge control MOSFET M1 (voltage between VCC and CS), it senses the discharge current during normal mode and detects whether charging current is present during power-down mode. PIN 4: OD - of Output pin for control discharge control MOSFET M1. When overdischarge occurs, this pin goes high to turn off the discharge control MOSFET M1 and discharging is inhibited. PIN 5: TD - Overdischarge delay time setting pin. PIN 6: TI - Overcurrent delay time setting pin. PIN 7: TC - Overcharge delay time setting pin. PIN 8: GND - Ground pin. This pin is to be connected to the negative terminal of the battery cell BAT4. PIN 9: UD4- This pin is to be connected to the positive terminal of the battery cell BAT4 for cell-balancing bleeding function under overcharge condition. www.SiliconStandard.com 7 of 12 SS6804 PIN10: VC3- PIN11: UD3 - PIN12: VC2 - Input pin for battery BAT4 voltage sensing. This pin is to be connected to the positive terminal of the battery cell BAT4. This pin is to be connected to the positive terminal of the battery cell BAT3 for cellbalancing bleeding function under overcharge condition. Input pin for battery BAT3 voltage sensing. This pin is to be connected to the positive terminal of the battery cell BAT3. PIN13: UD2 - This pin is to be connected to the positive terminal of the battery cell BAT2 for cell-balancing bleeding function overcharge condition. under PIN14: VC1 - Input pin for battery BAT2 voltage sensing. This pin is to be connected to the positive terminal of the battery cell BAT2. PIN15: UD1 - positive terminal of the battery BAT1 for cell-balancing bleeding function under overcharge condition. PIN16: VCC - Power supply pin and input for battery BAT1 voltage sensing. This pin is to be connected to the positive terminal of the battery cell BAT1. APPLICATION INFORMATION THE OPERATION Initialization On initial power-up, such as connecting the battery pack for the first time to the SS6804, the SS6804 enters the power-down mode. A charger must be applied to the SS6804 circuit to enable the pack. Overcurrent Protection Overcharge Protection When the voltage of either of the battery cells exceeds the overcharge protection voltage (VOCP) beyond the overcharge delay time (TOC) period, charging is inhibited by the turning-off of the charge control MOSFET M2. The overcharge delay time is set by the external capacitor CTC. Inhibition of charging is immediately released when the voltage of the overcharged cell becomes lower than overcharge release voltage (VOCR or VOCP-VHYS) through discharging. Overdischarge Protection When the voltage of either of the battery cells falls below the overdischarge protection voltage (VODP) beyond the overdischarge delay time (TOD) period, discharging is inhibited by the 12/29/2003 Rev.2.02 turning-off of the discharge control MOSFET M1. The overdischarge delay time is set by the external capacitor CTD. Inhibition of discharging is immediately released when the voltage of the overdischarge cell becomes higher than the overdischarge release voltage (VODR) through charging. In normal mode, the SS6804 continuously monitors the discharge current by sensing the voltage of CS pin. If the voltage VCC-VCS exceeds the overcurrent protection voltage (VOIP) beyond the overcurrent delay time (TOI) period, the overcurrent protection circuit operates and discharging is inhibited by the turning-off of the discharge control MOSFET M1. Discharging must be inhibited for at least 256ms after overcurrent takes place to avoid damage to external control MOSFETs due to rapidly switching transient between BATT+ and BATTterminals. The overcurrent condition returns to normal mode when the load is released and the impedance between the BATT+ and BATTterminals is 20MΩ or higher. The SS6804 is provided www.SiliconStandard.com with the three 8 of 12 SS6804 overcurrent detection levels (0.15V, 0.3V and 1.0V) and the three overcurrent delay time (TOI1, TOI2 and TOI3) corresponding to each overcurrent detection level. TOI1 is set by the external capacitor CTI. TOI2 and TOI3 default to 4ms and 300µs respectively, and can not be adjusted due to protection of external MOSFETs charger is connected to the battery pack, the SS6804 immediately turns on all the timing generation and detection circuitry and goes into normal mode. Charging is determined to be in progress if the CS pin voltage is higher than VCC + 0.4V (charge detection threshold voltage VCH). DESIGN GUIDE Cell-Balancing Bleeding after Overcharge When either of the battery cells is overcharged, the SS6804 provides the cell-balancing bleeding function to discharge the overcharged cell at about 9mA until the voltage of the overcharged cell decreases to overcharge release voltage (VOCR or VOCP-VHYS). Connecting UD1, UD2, UD3 and UD4 pins to the positive terminals of battery cells BAT1, BAT2, BAT3 and BAT4 accomplish this function, respectively. Inserting resistors along UD2 pin to BAT2 positive terminal path and UD4 pin to BAT4 positive terminal path can decrease the bleeding current. Power-Down after Overdischarge When overdischarge occurs, the SS6804 will go into power-down mode, turning off all the timing generation and detection circuitry to reduce the quiescent current to about 2.2µA (VCC=9.2V). In the unusual case where one battery cell is overdischarged while another one under overcharge condition, the SS6804 will turn off all the detection circuitry except the overcharge detection circuit for the cell under overcharge condition. Cell Number Selection The user must configure the SS6804 for three or four series cells application. For three-cell application, NSL pin should be connected directly to VCC pin. For four-cell application, NSL pin should be connected directly to GND pin. No. of Series Cells NSL Pin 3-cell Connected to VCC 4-cell Connected to GND The protection circuit for three-cell lithium-ion battery pack is shown in application examples Fig. 1. Setting the Overcharge and Overdischarge Delay Time The overcharge delay time is set by the external capacitor CTC and the overdischarge delay time is set by the external capacitor CTD. The relationship between capacitance of the external capacitors and delay time is tabulated as below. CTC ‚CTD(nF) TOC ‚TOD(ms) 1 21 5 52 10 132 22 253 33 347 47 617 68 748 82 1004 100 1630 Charge Detection after Overdischarge When overdischarge occurs, the discharge control MOSFET M1 turns off and discharging is inhibited. However, charging is still permitted through the parasitic diode of M1. Once the 12/29/2003 Rev.2.02 www.SiliconStandard.com 9 of 12 SS6804 The delay time can also be approximately calculated by the following equations (if CTC, CTD ≤ 82nF) : TOC(mS) = 11.8 x CTC(nF) TOD(mS) = 11.8 x CTD(nF) Setting the Overcurrent Delay Time 1 The overcurrent delay time 1 (TOI1) at 0.15V < VCC-VCS < 0.3V is set by the external capacitor CTI, while the overcurrent delay time 2 and 3 (TOI2 and TOI3) is fixed by IC internal circuit.The relationship between capacitance of the external capacitor and delay time is tabulated as below. CT I (nF) TOI (ms) 1 4.8 2.2 15.0 3.3 18.8 5 23.6 6.8 31.0 10 61.8 Selection of External Control MOSFETs Because the overcurrent protection voltage is preset, the threshold current for overcurrent detection is determined by the turn-on resistance of the discharge control MOSFET M1. The turn-on resistance of the external control MOSFETs can be determined by the equation: RON=VOIP/IT (IT is the overcurrent threshold current). For example, if the overcurrent threshold current I T is designed to be 5A, the turn-on resistance of the external control MOSFETs must be 30mΩ. Users should be aware that turn-on resistance of the MOSFET changes with temperature variation due to heat 12/29/2003 Rev.2.02 dissipation. It changes with the voltage between gate and source as well. (Turn-on resistance of a MOSFET increases as the voltage between gate and source decreases). Once the turn-on resistance of the external MOSFET changes, the overcurrent threshold current will change accordingly. Suppressing the Ripple and Disturbance from Charger To suppress the ripple and disturbance from charger, connecting R1 to R4 and C1 to C4 is recommended. Larger R1 will cause larger error of battery sense voltage. Controlling the Charge Control MOSFET R5, R6, R7 and NPN transistor Q1 are used to switch the charge control MOSFET M2. If overcharge does not occur, no current flows into OC pin and Q1 is turned off, then M2 is turned on. When overcharge occurs, current flows into OC pin and Q1 is turned on, which turns off M2 in turn. Protection at CS Pin R8 is used for protection of IC when charger is connected in reverse. The charge detection function after overdischarge is possibly disabled by larger value of R8. Resistance of 1KΩ is recommended. www.SiliconStandard.com 10 of 12 SS6804 APPLICATION EXAMPLE R8 1K NSL 2 OC 3 CS 4 5 CTD + 82nF + + C TC 82nF OD TD TI 7 TC 8 R1 C1 0.1µF 15 UD1 14 VC1 1K UD3 VC3 C2 1K 0.1µF GND UD4 SSM4435M M2 M1 C3 1K 0.1µF FUSE BATT+ R5 1M BAT1 R3 11 10 9 SSM4435M R2 13 UD2 12 VC2 6 CTI 2.2nF 16 VCC 2N3906 Q1 1 R6 1M BAT2 R7 1M R4 1K C4 0.1µF BAT3 BATT- SS6804 Fig. 12 Protection Circuit for Three-Cell Lithium-Ion Battery Pack TIMING DIAGRAM Overcharge and Overdischarge Protection (VCS=VCC) <TOC TOC V BAT1 V OCP VCELL V OCP - VHYS VODR V BAT2 V BAT4 V BAT3 VODP TOD <TOD VOC VOD 12/29/2003 Rev.2.02 Hi-Z Hi-Z 0V VCC 0V www.SiliconStandard.com 11 of 12 SS6804 Overcurrent Protection (V CELL=3.5V) <256ms >256ms VCC VCC - 0.15V VCC - 0.3V VCS VCC - 1V 0V TOI1 <TOI2 <TOI1 TOI3 VCC VOD 0V 256ms <256ms VOC Hi-Z PHYSICAL DIMENSIONS 16 LEAD PLASTIC SO (150 mil) (unit: mm) D SYMBOL MIN MAX A 1.35 1.75 A1 0.10 0.25 B 0.33 0.51 C 0.19 0.25 D 9.80 10.00 E 3.80 4.00 H E e e H 5.80 6.20 L 0.40 1.27 A1 A 1.27 (TYP) B C L Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 12/29/2003 Rev.2.02 www.SiliconStandard.com 12 of 12