SSDI SDR3MHFSMS

SDR3KHF & SDR3KHFSMS
thru
SDR3NHF & SDR3NHFSMS
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
DESIGNER’S DATA SHEET
3 AMP
800 - 1200 V
35 nsec
Hyper Fast Rectifier
Features:
• Hyper Fast Recovery: 35 nsec maximum
• PIV to 1200 Volts
• Hermetically Sealed
• Void Free Construction
• For High Efficiency Applications
SMS
Axial Lead Diode
• Single Chip Construction
• Low Reverse Leakage
• TX, TXV, S Level screening Available
Maximum Ratings
Peak Repetitive Reverse and DC Blocking Voltage
SDR3KHF
SDR3MHF
SDR3NHF
Average Rectified Forward Current
(Resistive Load, 60 hz Sine Wave, TA = 25 °C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Leads, L = 3/8
Junction to Tabs
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
Symbol
Value
Units
VRRM
VRSM
VR
800
1000
1200
Volts
Io
3.0
Amps
IFSM
70
Amps
TOP & TSTG
-65 to +175
ºC
R?JE
20
14
ºC/W
DATA SHEET #: RC0097A
DOC
SDR3DHF & SDR3DHFSMS
thru
SDR3NHF & SDR3NHFSMS
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Electrical Characteristic
Instantaneous Forward Voltage Drop
(TA = 25ºC, pulsed)
Instantaneous Forward Voltage Drop
(TA = -55ºC, pulsed)
Reverse Leakage Current
(Rated VR, TA = 25ºC, pulsed)
Reverse Leakage Current
(Rated VR, TA = 100ºC, pulsed)
Reverse Recovery Time
(IF = 500mA, IR = 1A, IRR = 250mA, TA =
25ºC)
Junction Capacitance
(VR = 10VDC, f = 1MHz, TA = 25ºC)
Case Outline: (Axial)
Case Outline: (SMS)
Symbol
Max
Units
VDC
SDR3KHF – SDR3NHF
3A
1A
VF1
VF2
3.1
1.9
SDR3KHF – SDR3NHF
1A
VF3
2.0
VDC
IR1
10
µA
IR2
300
µA
tRR
35
nsec
CJ
30
pF
DIM
A
B
C
D
MIN
––
––
0.047”
0.950”
MAX
0.165”
0.220”
0.053”
––
DIM
A
B
C
D
MIN
0.172”
0.180”
0.022”
0.002”
MAX
0.180”
0.280”
0.028”
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