FFP08S60S Stealth 2 Rectifier tm Features 8A, 600V Stealth2 Rectifier • High Speed Switching ( Max. trr<30ns @ IF=8A ) The FFP08S60S is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial planar construction. • High Reverse Voltage and High Reliability • Avalanche Energy Rated This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Applications • General Purpose • Switching Mode Power Supply • Boost Diode in continuous mode power factor corrections • Power switching circuits Pin Assignments 1. Cathode 2 2. Anode 1 1. Cathode TO-220-2L 2. Anode Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted Parameter Value Units VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics T C Symbol @ TC = 115 °C A A - 65 to +150 °C = 25°C unless otherwise noted Parameter Maximum Thermal Resistance, Junction to Case RθJC 8 80 Max Units 2.5 °C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F08S60S FFP08S60STU TO-220-2L - - 50 ©2006 Fairchild Semiconductor Corporation FFP08S60S Rev. A 1 www.fairchildsemi.com FFP08S60S Stealth 2 Rectifier April 2007 C = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units IF = 8A IF = 8A TC = 25 °C TC = 125 °C - 2.1 1.6 2.6 - V V IRM1 VR = 600V VR = 600V TC = 25 °C TC = 125 °C - - 100 500 µA µA trr IF =1A, di/dt = 100A/µs, VR= 30V TC = 25 °C - - 25 ns trr Irr S factor Qrr IF =8A, di/dt = 200A/µs, VR = 390V TC = 25 °C - 19 2.2 0.6 21 30 - ns A trr Irr S factor Qrr IF =8A, di/dt = 200A/µs, VR= 390V - 58 4.3 1.3 125 - nC WAVL Avalanche Energy (L = 40mH) 20 - - mJ VFM 1 TC = 125 °C nC ns A Notes: 1. Pulse : Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms 2 FFP08S60S Rev. A www.fairchildsemi.com FFP08S60S Stealth 2 Rectifier Electrical Characteristics T C = 25°C unless otherwise noted Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current 1E-4 REVERSE CURRENT, IR [A] FPRWARD CURRENT, IF [A] 100 o TC=125 C 10 o TC=25 C 1 o TC=75 C 0.1 0.0 1E-5 o TC = 125 C 1E-6 o TC = 75 C 1E-7 o TC = 25 C 1E-8 1E-9 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 100 FORWARD VOLTAGE, VF [V] 300 400 500 600 Figure 4. Typical Reverse Recovery Time 100 100 f = 1MHz 90 REVERSE RECOVERY TIME, trr [ns] JUNCTION CAPACITANCE, CJ [pF] 200 REVERSE VOLTAGE, VR [V] Figure 3. Typical Junction Capacitance 80 70 60 50 40 30 20 10 0 1 10 100 IF = 8A 90 80 70 o TC = 125 C 60 50 40 o TC = 75 C 30 20 o TC = 25 C 10 0 100 1000 200 Figure 5. Typical Reverse Recovery Current AVERAGE FORWARD CURRENT, IF(AV) [A] IF =8A 8 7 6 5 o TC = 125 C o TC = 75 C 4 o TC = 25 C 3 2 1 0 100 200 300 400 500 12 11 10 9 8 7 6 DC 5 4 3 2 1 0 100 500 110 120 130 140 150 o di/dt [A/µs] CASE TEMPERATURE, TC [ C] 3 FFP08S60S Rev. A 400 Figure 6. Forward Current Deration Curve 10 9 300 di/dt [A/µs] REVERSE VOLTAGE, VR [V] REVERSE RECOVERY CURRENT, Irr [A] FFP08S60S Stealth 2 Rectifier Typical Performance Characteristics T www.fairchildsemi.com FFP08S60S Stealth 2 Rectifier Mechanical Dimensions TO-220-2L Dimensions in Millimeters 4 FFP08S60S Rev. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I24