FAIRCHILD FFP08S60S

FFP08S60S
Stealth 2 Rectifier
tm
Features
8A, 600V Stealth2 Rectifier
• High Speed Switching ( Max. trr<30ns @ IF=8A )
The FFP08S60S is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast
rectifier and are silicon nitride passivated ion-implanted epitaxial
planar construction.
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
This device is intended for use as freewheeling of boost diode
in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching
circuits reducing power loss in the switching transistors.
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
Pin Assignments
1. Cathode
2
2. Anode
1
1. Cathode
TO-220-2L
2. Anode
Absolute Maximum Ratings
Symbol
TC = 25°C unless otherwise noted
Parameter
Value
Units
VRRM
Peak Repetitive Reverse Voltage
600
V
VRWM
Working Peak Reverse Voltage
600
V
VR
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
TJ, TSTG
Operating Junction and Storage Temperature
Thermal Characteristics T
C
Symbol
@ TC = 115 °C
A
A
- 65 to +150
°C
= 25°C unless otherwise noted
Parameter
Maximum Thermal Resistance, Junction to Case
RθJC
8
80
Max
Units
2.5
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
F08S60S
FFP08S60STU
TO-220-2L
-
-
50
©2006 Fairchild Semiconductor Corporation
FFP08S60S Rev. A
1
www.fairchildsemi.com
FFP08S60S Stealth 2 Rectifier
April 2007
C
= 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max
Units
IF = 8A
IF = 8A
TC = 25 °C
TC = 125 °C
-
2.1
1.6
2.6
-
V
V
IRM1
VR = 600V
VR = 600V
TC = 25 °C
TC = 125 °C
-
-
100
500
µA
µA
trr
IF =1A, di/dt = 100A/µs, VR= 30V
TC = 25 °C
-
-
25
ns
trr
Irr
S factor
Qrr
IF =8A, di/dt = 200A/µs, VR = 390V
TC = 25 °C
-
19
2.2
0.6
21
30
-
ns
A
trr
Irr
S factor
Qrr
IF =8A, di/dt = 200A/µs, VR= 390V
-
58
4.3
1.3
125
-
nC
WAVL
Avalanche Energy (L = 40mH)
20
-
-
mJ
VFM
1
TC = 125 °C
nC
ns
A
Notes:
1. Pulse : Test Pulse width = 300µs, Duty Cycle = 2%
Test Circuit and Waveforms
2
FFP08S60S Rev. A
www.fairchildsemi.com
FFP08S60S Stealth 2 Rectifier
Electrical Characteristics T
C
= 25°C unless otherwise noted
Figure 1. Typical Forward Voltage Drop
Figure 2. Typical Reverse Current
1E-4
REVERSE CURRENT, IR [A]
FPRWARD CURRENT, IF [A]
100
o
TC=125 C
10
o
TC=25 C
1
o
TC=75 C
0.1
0.0
1E-5
o
TC = 125 C
1E-6
o
TC = 75 C
1E-7
o
TC = 25 C
1E-8
1E-9
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
100
FORWARD VOLTAGE, VF [V]
300
400
500
600
Figure 4. Typical Reverse Recovery Time
100
100
f = 1MHz
90
REVERSE RECOVERY TIME, trr [ns]
JUNCTION CAPACITANCE, CJ [pF]
200
REVERSE VOLTAGE, VR [V]
Figure 3. Typical Junction Capacitance
80
70
60
50
40
30
20
10
0
1
10
100
IF = 8A
90
80
70
o
TC = 125 C
60
50
40
o
TC = 75 C
30
20
o
TC = 25 C
10
0
100
1000
200
Figure 5. Typical Reverse Recovery Current
AVERAGE FORWARD CURRENT, IF(AV) [A]
IF =8A
8
7
6
5
o
TC = 125 C
o
TC = 75 C
4
o
TC = 25 C
3
2
1
0
100
200
300
400
500
12
11
10
9
8
7
6
DC
5
4
3
2
1
0
100
500
110
120
130
140
150
o
di/dt [A/µs]
CASE TEMPERATURE, TC [ C]
3
FFP08S60S Rev. A
400
Figure 6. Forward Current Deration Curve
10
9
300
di/dt [A/µs]
REVERSE VOLTAGE, VR [V]
REVERSE RECOVERY CURRENT, Irr [A]
FFP08S60S Stealth 2 Rectifier
Typical Performance Characteristics T
www.fairchildsemi.com
FFP08S60S Stealth 2 Rectifier
Mechanical Dimensions
TO-220-2L
Dimensions in Millimeters
4
FFP08S60S Rev. A
www.fairchildsemi.com
tm
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
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changes at any time without notice to improve design.
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the right to make changes at any time without notice to improve design.
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Rev. I24