SPC4567 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4567 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES N-Channel 40V/6.0A,RDS(ON)= 53@VGS= 10V 40V/5.0A,RDS(ON)= 68@VGS= 4.5V 40V/4.5A,RDS(ON)= 78Ω@VGS= 2.5V P-Channel -40V/-7.2A,RDS(ON)= 95mΩ@VGS=- 10V -40V/-5.0A,RDS(ON)= 110mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design PIN CONFIGURATION(SOP – 8P) PART MARKING 2009/06/01 Ver.1 Page 1 SPC4567 N & P Pair Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 5 D2 Gate 2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1 ORDERING INFORMATION Part Number Package SPC4567S8RGB SOP- 8P Part Marking SPC4567 ※ SPC4567S8RGB 13” Tape Reel ; Pb – Free ; Halogen – Free e ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Typical Parameter Symbol Unit N-Channel P-Channel Drain-Source Voltage VDSS 40 -40 V Gate –Source Voltage VGSS ±20 ±20 V 6.0 -7.2 5.0 -5.0 25 2.3 2.5 -25 -2.3 2.8 1.6 1.8 Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current IDM Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient 2009/06/01 Ver.1 ID IS PD TJ TSTG T ≤ 10sec Steady State RθJA A A W ℃ ℃ -55/150 -55/150 50 80 A 52 80 ℃/W Page 2 SPC4567 N & P Pair Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS ( NMOS ) (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS= 5V,VGS =4.5V Forward Transconductance gfs Diode Forward Voltage VSD IS=2.3A,VGS =0V RDS(on) 0.5 1.0 VDS=0V,VGS=±12V VDS=40V,VGS=0V VDS=40V,VGS=0V TJ=85℃ VGS= 10V,ID=6.0A VGS=4.5V,ID=5.0A VGS=2.5V,ID=4.5A VDS=15V,ID=6.2A Drain-Source On-Resistance 40 ±100 1 5 10 V nA uA A 42 52 67 13 0.053 0.063 0.078 0.8 1.2 16 24 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.5 td(on) 15 20 6 12 10 20 40 80 Turn-On Time Turn-Off Time 2009/06/01 Ver.1 tr td(off) tf VDS=15V,VGS=10V ID= 2A VDD=15V,RL=15Ω ID≡1.0A,VGEN=10V RG=6Ω nC 3 Page 3 nS SPC4567 N & P Pair Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS ( PMOS ) (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS= -5V,VGS =-4.5V Forward Transconductance gfs Diode Forward Voltage VSD IS=-1.3A,VGS =0V RDS(on) -0.8 -2.5 VDS=0V,VGS=±20V VDS=-36V,VGS=0V VDS=-36V,VGS=0V TJ=85℃ VGS=-10V,ID=-7.2A VGS=-4.5V,ID=-5.0A VDS=-15V,ID=-5.7A Drain-Source On-Resistance -40 ±100 -1 -5 -10 V nA uA A 0.082 0.095 13 0.095 0.110 -0.55 -1.0 9 12 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time Turn-Off Time 2009/06/01 Ver.1 VDS=-15V,VGS=-10V ID= -3.5A 2.0 VDS=-15V,VGS=0V f=1MHz td(on) tr td(off) tf nC 1.5 VDD=-15V,RL=15Ω ID≡-1.0A,VGEN=-10V RG=6Ω 500 pF 95 50 8 20 10 20 30 35 15 20 Page 4 nS SPC4567 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( NMOS ) 2009/06/01 Ver.1 Page 5 SPC4567 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( NMOS ) 2009/06/01 Ver.1 Page 6 SPC4567 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( NMOS ) 2009/06/01 Ver.1 Page 7 SPC4567 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( PMOS ) 2009/06/01 Ver.1 Page 8 SPC4567 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( PMOS ) 2009/06/01 Ver.1 Page 9 SPC4567 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( PMOS ) 2009/06/01 Ver.1 Page 10 SPC4567 N & P Pair Enhancement Mode MOSFET SOP- 8 PACKAGE OUTLINE 2009/06/01 Ver.1 Page 11 SPC4567 N & P Pair Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. 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