SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES N-Channel 30V/2.8A,RDS(ON)= 60mΩ@VGS=10V 30V/2.3A,RDS(ON)= 80mΩ@VGS=4.5V P-Channel -30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V -30V/-2.5A,RDS(ON)=135mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP– 6P package design PIN CONFIGURATION( TSOP– 6P ) PART MARKING 2010/10/28 Ver.5 Page 1 SPC6602 N & P Pair Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G1 Gate 1 2 S2 Source 2 3 G2 4 D2 Gate 2 Drain 2 5 S1 6 D1 Source 1 Drain1 ORDERING INFORMATION Part Number Package Part Marking SPC6602ST6RG TSOP- 6P 02YW SPC6602ST6RGB TSOP- 6P 02YW ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPC6602ST6RG : Tape Reel ; Pb – Free ※ SPC6602ST6RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Typical Parameter Symbol Unit N-Channel P-Channel Drain-Source Voltage VDSS 30 -30 V Gate –Source Voltage VGSS ±20 ±20 V 2.8 -2.8 2.3 -2.1 IDM 10 -8 IS 1.25 -1.4 Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient 2010/10/28 Ver.5 ID 1.15 PD T ≤ 10sec Steady State RθJA ℃ ℃ -55/150 -55/150 50 90 A A W 0.75 TJ TSTG A 52 90 ℃/W Page 2 SPC6602 N & P Pair Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol V(BR)DSS VGS(th) Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance RDS(on) Forward Transconductance gfs Diode Forward Voltage VSD Conditions VGS=0V,ID= 250uA VGS=0V,ID=-250uA VDS=VGS,ID=250uA VDS=VGS,ID=-250uA VDS=0V,VGS=±20V VDS=0V,VGS=±20V VDS= 24V,VGS=0V VDS=-24V,VGS=0V VDS= 24V,VGS=0V TJ=55℃ VDS=-24V,VGS=0V TJ=55℃ VDS≥ 5V,VGS = 10V VDS≤ -5V,VGS =-10V VGS= 10V,ID= 2.8A VGS=-10V,ID=-2.8A VGS= 4.5V,ID= 2.3A VGS=-4.5V,ID=-2.5A VDS=4.5V,ID=2.8A VDS=-10V,ID=-2.8A IS= 1.25A,VGS =0V IS=-1.2A,VGS =0V Min. N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Typ 30 -30 1 1 Max. Unit 3 -3 ±100 ±100 1 -1 10 -10 6 -6 V nA uA A 0.043 0.088 0.056 0.118 4.6 4 0.8 -0.8 0.060 0.105 0.080 0.135 4.5 5.8 0.8 0.8 1.0 1.5 8 9 12 9 17 18 8 6 10 10 Ω S 1.2 -1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd td(on) Turn-On Time tr td(off) Turn-Off Time tf 2010/10/28 Ver.5 N-Channel VDS=15 ,VGS=4.5V , ID≡2.0A P-Channel VDS=-15V ,VGS=-4.5V , ID≡-2.0A N-Channel VDD=15 , RL=10Ω VGEN=10V , RG=3Ω P-Channel VDD=-15V , RL=15Ω VGEN=-10V , RG=3Ω N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch nC 20 20 30 20 35 35 20 20 nS Page 3 SPC6602 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( N-Channel ) 2010/10/28 Ver.5 Page 4 SPC6602 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2010/10/28 Ver.5 Page 5 SPC6602 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2010/10/28 Ver.5 Page 6 SPC6602 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( P-Channel ) 2010/10/28 Ver.5 Page 7 SPC6602 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( P-Channel ) 2010/10/28 Ver.5 Page 8 SPC6602 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( P-Channel ) 2010/10/28 Ver.5 Page 9 SPC6602 N & P Pair Enhancement Mode MOSFET TSOP- 6P PACKAGE OUTLINE 2010/10/28 Ver.5 Page 10 SPC6602 N & P Pair Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. 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