SYNC-POWER SPN4920AS8RG

SPN4920A
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4920A is the Dual N-Channel logic
enhancement mode power field effect transistors are
produced using high cell density , DMOS trench
technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹
30V/6.8A,RDS(ON)= 35mΩ@VGS= 10V
‹
30V/5.8A,RDS(ON)= 45mΩ@VGS= 4.5V
‹
Super high density cell design for extremely low
RDS (ON)
‹
Exceptional on-resistance and maximum DC
current capability
‹
SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2007/ 09 / 30 Ver.1
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SPN4920A
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
S1
Source 1
2
G1
Gate 1
3
S2
Source 2
4
G2
5
D2
Gate 2
Drain 2
6
D2
Drain 2
7
D1
Drain 1
8
D1
Drain 1
ORDERING INFORMATION
Part Number
Package
Part
Marking
SPN4920AS8RG
SOP- 8P
SPN4920A
SPN4920AS8TG
SOP- 8P
SPN4920A
※ SPN4920AS8RG : 13” Tape Reel ; Pb – Free
※ SPN4920AS8TG : Tube ; Pb – Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
30
V
Gate –Source Voltage
VGSS
±20
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
ID
6.8
5.8
A
IDM
35
A
IS
1.7
A
PD
2.8
1.8
W
TJ
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
65
℃/W
2007/ 09 / 30 Ver.1
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SPN4920A
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
VDS≥5V,VGS =10V
Forward Transconductance
gfs
Diode Forward Voltage
VSD
IS=2.0A,VGS =0V
RDS(on)
1.0
3.0
VDS=0V,VGS=±20V
VDS=30V,VGS=0V
VDS=30V,VGS=0V
TJ=85℃
VGS= 10V,ID=6.8A
VGS=4.5V,ID=5.8A
VDS=15V,ID=6.2A
Drain-Source On-Resistance
30
±100
1
V
nA
uA
5
20
A
0.026
0.036
13
0.035
0.045
0.8
1.2
10
15
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Time
Turn-Off Time
2007/ 09 / 30 Ver.1
VDS=20V,VGS=10V
ID= 7.2A
2.3
td(on)
tr
td(off)
tf
nC
1.8
VDD=20V,RL=20Ω
ID≡1.0A,VGEN=10V
RG=6Ω
8
15
12
25
15
35
10
20
nS
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SPN4920A
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2007/ 09 / 30 Ver.1
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SPN4920A
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2007/ 09 / 30 Ver.1
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SPN4920A
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2007/ 09 / 30 Ver.1
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SPN4920A
N-Channel Enhancement Mode MOSFET
SOP- 8 PACKAGE OUTLINE
2007/ 09 / 30 Ver.1
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SPN4920A
N-Channel Enhancement Mode MOSFET
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mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
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SYNC Power Corporation
9F-5, No.3-2, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
©http://www.syncpower.com
2007/ 09 / 30 Ver.1
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