SPN4946W - Sync Power Corp.

SPN4946W
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4946W is the Dual N-Channel logic
enhancement mode power field effect transistors are
produced using high cell density , DMOS trench
technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹
60V/ 10A,RDS(ON)= 42mΩ@VGS= 10V
‹
60V/ 6A,RDS(ON)= 48mΩ@VGS= 4.5V
‹
Super high density cell design for extremely low
RDS (ON)
‹
Exceptional on-resistance and maximum DC
current capability
‹
SOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
PART MARKING
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SPN4946W
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
Symbol
Description
1
S1
Source 1
2
G1
Gate 1
3
S2
Source 2
4
G2
5
D2
Gate 2
Drain 2
6
D2
Drain 2
7
D1
Drain 1
8
D1
Drain 1
ORDERING INFORMATION
Part Number
Package
SPN4946WS8RG
SOP- 8P
Part
Marking
SPN4946W
※ SPN4946WS8RG 13” Tape Reel ; Pb – Free
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
60
V
Gate –Source Voltage
VGSS
±20
V
Continuous Drain Current(TJ=150℃)
TA=25℃
TA=70℃
ID
8.0
6.0
A
Pulsed Drain Current
IDM
30
A
Avalanche Current
IAS
11
A
Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
PD
2.5
1.6
W
TJ
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
80
℃/W
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SPN4946W
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
Gate Leakage Current
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
VDS≥5V,VGS =10V
Forward Transconductance
gfs
Diode Forward Voltage
VSD
IS=2.0A,VGS =0V
RDS(on)
0.8
2.0
VDS=0V,VGS=±20V
VDS=60V,VGS=0V
VDS=60V,VGS=0V
TJ=85℃
VGS= 10V,ID=10A
VGS=4.5V,ID=6A
VDS=15V,ID=5.3A
Drain-Source On-Resistance
60
±100
1
V
nA
uA
5
30
A
0.033
0.038
24
0.042
0.048
0.8
1.2
10
15
Ω
S
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
48
td(on)
10
15
12
20
25
35
10
15
Turn-On Time
tr
Turn-Off Time
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Ver.1
td(off)
tf
VDS=30V,VGS=5V
ID= 5.3A
nC
3.5
3.6
VDS=30V,VGS=0V
f=1MHz
VDD=30V,RL=6.8Ω
ID≡4.4A,VGEN=10V
RG=1Ω
890
pF
85
nS
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SPN4946W
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4946W
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4946W
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN4946W
N-Channel Enhancement Mode MOSFET
SOP- 8 PACKAGE OUTLINE
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SPN4946W
N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the
penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use.
No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions
mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information
previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support
devices or systems without express written approval of SYNC Power Corporation.
©The SYNC Power logo is a registered trademark of SYNC Power Corporation
©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved
SYNC Power Corporation
9F-5, No.3-2, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
©http://www.syncpower.com
2010/ 03/ 25
Ver.1
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