FAIRCHILD FYA3010DN

FYA3010DN
Schottky Barrier Rectifier
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
1. Anode 2.Cathode 3. Anode
TO-3P
1 2 3
Marking: Y3010DN
Absolute Maximum Ratings
Symbol
(per diode) Ta = 25°C unless otherwise noted
Parameter
VRRM
Maximum Repetitive Reverse Voltage
VR
Maximum DC Reverse Voltage
IF(AV)
Average Rectified Forward Current
IFSM
TJ, TSTG
Value
Units
100
V
100
V
30
A
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
250
A
Operating Junction and Storage Temperature
- 65 to +150
°C
Thermal Characteristics T
a
Symbol
@ TC = 135°C
= 25°C unless otherwise noted
Value
Units
RθJC
Maximum Thermal Resistance, Junction to Case (per diode)
Parameter
0.78
°C/W
RθJC
Maximum Thermal Resistance, Junction to Case (per PKG)
0.48
°C/W
RθJC
Maximum Thermal Resistance, Case to Heatsink
0.2
°C/W
Electrical Characteristics
Symbol
(per diode) Ta = 25°C unless otherwise noted
Parameter
VFM *
Maximum Instantaneous Forward Voltage
IF = 15A
IF = 15A
IF = 30A
IF = 30A
IRM *
Maximum Instantaneous Reverse Current
@ rated VR
Value
Units
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
0.85
0.67
1.05(Typ.)
0.80
V
TC = 25 °C
TC = 125 °C
1
20
mA
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2005 Fairchild Semiconductor Corporation
FYA3010DN Rev. A
1
www.fairchildsemi.com
FYA3010DN Schottky Barrier Rectifier
July 2005
FYA3010DN Schottky Barrier Rectifier
Typical Performance Characteristics
Figure 1. Typical Forward Voltage
Characteristics (per diode)
Figure 2. Typical Reverse Current vs.
Reverse Voltage (per diode)
Reverse Current, IR[mA]
Forward Current, IF[A]
100
10
1
o
TJ=125 C
o
0.1
TJ=75 C
10
1
10
0
o
TJ=125 C
o
T J=75 C
-1
10
-2
10
o
T J=25 C
o
TJ=25 C
0.01
0.0
-3
0.5
1.0
10
1.5
20
40
Forward Voltage Drop, VF[V]
60
80
100
Reverse Voltage, VR[V]
Figure 3. Typical Junction Capacitance
(per diode)
Figure 4. Forward Current Derating Curve
[A]
o
F(AV)
TJ=25 C
1000
900
800
700
600
500
Average Forward Current, I
Juntion Capacitance, CJ[pF]
35
400
300
200
100
90
80
0
20
40
60
80
DC
30
25
20
15
10
5
0
100
0
20
Reverse Voltage, VR[V]
80
100
120
140
160
Figure 6. Thermal Impedance Characteristics
(per diode)
300
10
Transient Thermal Impedance [°C/W]
Max. Forward Surge Current, IFSM[A]
60
Case Temperature, TC[°C]
Figure 5. Non-Repetive Surge Current
(per diode)
275
250
225
200
175
150
40
1
10
100
0.1
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
10
Pulse Duration [s]
Number of Cycles @ 60Hz
FYA3010DN Rev. A
1
2
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FYA3010DN Schottky Barrier Rectifier
Mechanical Dimensions
TO-3P
15.60 ±0.20
3.00 ±0.20
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
16.50 ±0.30
3.50 ±0.20
2.00 ±0.20
+0.15
1.50 –0.05
19.90 ±0.20
12.76 ±0.20
9.60 ±0.20
13.90 ±0.20
ø3.20 ±0.10
4.80 ±0.20
3.80 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
0.60 –0.05
5.45TYP
[5.45 ±0.30]
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
Y3010DN
FYA3010DN
TO-3P
-
-
30
Dimensions in Millimeters
FYA3010DN Rev. A
3
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
4
FYA3010DN Rev. A
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FYA3010DN Schottky Barrier Rectifier
TRADEMARKS