MBR2035CT-MBR2060CT MBR2035CT - MBR2060CT Features • • • • • • Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. PIN 1 + CASE PIN 2 PIN 3 1 2 3 TO-220AB Schottky Rectifiers Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Parameter Units 2035CT 2045CT 2050CT 2060CT 35 45 50 60 VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current .375 " lead length @ TA = 135°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range -65 to +175 °C Operating Junction Temperature -65 to +150 °C IFSM Tstg TJ V 20 A 150 A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units PD Power Dissipation 2.0 W RθJA Thermal Resistance, Junction to Ambient * 60 °C/W RθJL Thermal Resistance, Junction to Lead 2.0 °C/W Electrical Characteristics Symbol TA = 25°C unless otherwise noted Device Parameter 2035CT VF IR IRRM Forward Voltage IF = 10 A, TC = 25°C IF = 10 A, TC = 125°C IF = 20 A, TC = 25°C IF = 20 A, TC = 125°C Reverse Current @ rated VR TA = 25°C TA = 125°C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1.0 KHz 2001 Fairchild Semiconductor Corporation 2045CT Units 2050CT 2060CT 0.57 0.84 0.72 0.80 0.70 0.95 0.85 V V V V 0.1 15 0.15 150 mA mA 1.0 0.5 A MBR2035CT - MBR2060CT, Rev. C (continued) 20 16 12 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS 8 4 0 0 25 50 75 100 125 Ambient Temperature [ºC] 150 175 Peak Forward Surge Current, IFSM [A] Average Rectified Forward Current, IF [A] Typical Characteristics Figure 1. Forward Current Derating Curve 75 50 25 0 1 2 5 10 20 Number of Cycles at 60Hz 50 100 MBR2035CT-MBR2045CT MBR2035CT-MBR2045CT 1 MBR2050CT-MBR2060CT 0.1 µS Pulse Width = 300µ 2% Duty Cycle 0 0.2 0.4 0.6 0.8 Forward Voltage, VF [V] 1 2000 MBR2035CT-MBR2045CT 500 MBR2050CT-MBR2060CT 200 1 10 Reverse Voltage, VR [V] Figure 5. Total Capacitance 2001 Fairchild Semiconductor Corporation 1 MBR2050CT-MBR2060CT TA = 75º C 0.1 MBR2035CT-MBR2045CT 0.01 TA = 25º C 0.001 1.2 5000 100 0.1 T A = 125 º C MBR2050CT-MBR2060CT Figure 3. Forward Voltage Characteristics 1000 Reverse Current, IR [mA] 10 10 100 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs Reverse Voltage Transient Thermal Impedance [ºC/W] Forward Current, IF [A] 100 50 TA = 25º C T A = 150 º C Total Capacitance, CT [pF] 125 Figure 2. Non-Repetitive Surge Current 50 0.01 150 100 10 1 0.1 0.01 0.1 1 10 Pulse Duration [s] 100 Figure 6. Thermal Impedance Characteristics MBR2035CT - MBR2060CT, Rev. C MBR2035CT-MBR2060CT Schottky Rectifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4