1015MP 15 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems up to 1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 50 Watts Pk Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 65 Volts 3.5 Volts 1.0 Amps Pk - 65 to + 150oC + 200oC ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS POUT PIN PG Power Out Power Input Power Gain Efficiency Load Mismatch Tolerance ηc VSWR TEST CONDITIONS F= 1150 MHz Vcc = 50 Volts PW = 10 µsec, DF = 1% MIN TYP MAX UNITS 15 W W dB % 1.5 10 11 40 F = 1150 MHz 10:1 FUNCTIONAL CHARACTERISTICS @ 25°C BVebo BVces Hfe Cob θjc1 Emitter to Base Breakdown Ie = 5 mA Collector to Emitter Breakdown Ic = 15mA DC Current Gain Vce = 5V, Ic = 100 mA Output Capacitance Vcb = 50 V, f = 1 MHz Thermal Resistance Note 1: At rated output power and pulse conditions 3.5 65 20 V V 5.0 7.5 3.5 pF C/W o Rev A: Updated June 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1015MP CASE DRAWING: Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1015MP TEST CIRCUIT: Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.