ESDA6V8V5 Series Quad Array for ESD Protection P b Lead(Pb)-Free This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at apremium. Peak Pulse Power 100 Watts Reverse WorkingVoltage 6.8VOLTS 5 1 2 4 3 SOT-553 Features: * Low Leakage < 1µA @ 3 Volt * Breakdown Voltage: 6.8 Volt @ 1 mA * ESD Protection Meeting IEC61000-4-2 - Level 4 Mechanical Characteristics: * Void Free, Transfer-Molded, Thermosetting Plastic Case * Corrosion Resistant Finish, Easily Solderable * Package Designed for Optimal Automated Board Assembly * Small Package Size for High Density Applications SOT-553 Outline Dimensions D K 5 SOT-553 4 B 1 Unit:mm S 3 2 G J C A WEITRON http://www.weitron.com.tw 1/3 Dim A B C D G J K S Min Max 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 REF 0.08 0.16 0.10 0.30 1.50 1.70 09-Oct-07 ESDA6V8V5 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR I IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT VC VBR VRWM IT Test Current VBR Maximum Temperature Coefficient of VBR IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK V IR VF IT IPP Uni-Directional MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Value Unit Peak Power Dissipation (8 X 20 s @ TA = 25°C) (Note 1) PPK 100 W Steady State Power - 1 Diode (Note 2) PD 300 mW Thermal Resistance Junction to Ambient Above 25°C, Derate R JA 370 2.7 °C/W mW/°C Maximum Junction Temperature TJmax 150 °C Operating Junction and Storage Temperature Range TJ Tstg -55 to +150 °C VPP 16 16 9 kV TL 260 °C Characteristic ESD Discharge MIL STD 883C - Method 3015-6 IEC1000-4-2, Air Discharge IEC1000-4-2, Contact Discharge Lead Solder Temperature (10 seconds duration) ELECTRICAL CHARACTERISTICS (TA = 25°C) Typ Capacitance @ 0 V Bias (Note 3) Max VF @ IF = 200 mA IPP (A) (pF) (V) 10.5 10 90 1.3 0.5 11.5 9.0 80 1.3 0.1 12.5 8.0 70 1.3 Breakdown Voltage VBR @ 1 mA (Volts) Leakage Current IRM @ VRM Min Nom Max VRWM IRWM ( A) VC (V) ESDA5V6V5 5.32 5.6 5.88 3.0 1.0 ESDA6V2V5 5.89 6.2 6.51 4.0 ESDA6V8V5 6.46 6.8 7.14 4.3 Device VC Max @ IPP 1. Non-repetitive current per Figure 1. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR-4 board with min pad. 3. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C Device Marking Item Marking ESDA5V6V5 1 2 3 ESDA6V2V5 ESDA6V8V5 WEITRON http://www.weitron.com.tw Eqivalent Circuit diagram VE 2/3 5 4 09-Oct-07 ESDA6V8V5 Series 110 110 100 PERCENT OF IPP 90 80 70 % OF RATED POWER OR IPP WAVEFORM PARAMETERS tr = 8 s td = 20 s c-t 60 td = IPP/2 50 40 30 20 10 0 0 5 10 15 20 25 30 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Figure 1. Pulse Waveform Figure 2. Power Derating Curve 150 100 90 12 C, CAPACITANCE (pF) VC, CLAMPING VOLTAGE (V) 90 t, TIME ( s) 14 10 8 6 4 2 0 100 1 3 5 7 9 10 11 12.5 13.5 80 70 60 50 40 30 20 10 0 5.3 5.6 5.9 6.2 6.5 6.8 IPP, PEAK PULSE CURRENT (A) VBR, BREAKDOWN VOLTAGE (V) Figure 3. Clamping Voltage versus Peak Pulse Current Figure 4. Typical Capacitance WEITRON http://www.weitron.com.tw 3/3 7.1 09-Oct-07