Quad Array for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in volt- MSQA6V1W5 age and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a 5 4 1 2 premium. Specification Features 3 SOT-353 /SC-88A • SC88A Package Allows Four Separate Unidirectional Configurations • Low Leakage < 1 µA @ 3 Volt • Breakdown Voltage: 6.1 Volt – 7.2 Volt @ 1 mA • Low Capacitance (90 pF typical) • ESD Protection Meeting IEC1000–4–2 Mechanical Characteristics CASE 419A MARKING DIAGRAM 5 4 • Void Free, Transfer–Molded, Thermosetting Plastic Case • Corrosion Resistant Finish, Easily Solderable • Package Designed for Optimal Automated Board Assembly • Small Package Size for High Density Applications 1 D 61 3 2 61 = Device Marking D = One Digit Date Code ORDERING INFORMATION Device MSQA6V1W5 Package SC–88A Shipping 3000/Tape & Reel 5 1 4 2 3 MSQA6V–1/3 MSQA6V1W5 MAXIMUM RATINGS (T A = 25°C unless otherwise noted) Characteristic Symbol Value Unit Peak Power Dissipation @ 20 µs @T A < 25°C (Note 1.) Steady State Power – 1 Diode (Note 2.) P pk PD 150 385 Watts mW Thermal Resistance Junction to Ambient Above 25°C, Derate R θJA 325 3.1 °C/W mW/°C T JMax T J,T stg 150 –55 to +150 °C °C V PP 16 16 kV Maximum Junction Temperature Operating Junction and Storage Temperature Range ESD Discharge MIL STD 883C – Method 3015–6 IEC1000–4–2, Air Discharge IEC1000–4–2, Contact Discharge Lead Solder Temperature (10 seconds duration) 9 260 TL °C ELECTRICAL CHARACTERISTICS Device MSQA6V1W5 Breakdown Voltage V BR @ 1 mA (Volts) Min Nom Max 6.1 6.6 7.2 Leakage Current I RM @ V RM = 3 V (µ µA) 1.0 Capacitance @ 0 V Bias (pF) 90 Max V F @ I F = 200 mA (V) 1.25 1. Non–repetitive current per Figure 1. Derate per Figure 2. 100 1000 % OF PEAK PULSE CURRENT P pk, PEAK SURGE POWER (WATTS) 2. Only 1 diode under power. For all 4 diodes under power, P D will be 25%. Mounted on FR–4 board with min pad. 100 100 1 90 80 70 60 50 40 30 20 10 0 1 10 100 1000 0 20 40 60 t, TIME (ms) t, TIME (µs) Figure 1. Pulse Width Figure 2. 8 × 20 µs Pulse Waveform 80 MSQA6V–2/3 100 100 90 90 TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY OR CURRENT @ T A = 25 C ° MSQA6V1W5 80 70 60 50 40 30 20 10 70 60 50 40 30 20 10 0 0 0 25 50 75 100 125 150 175 200 0 1.0 2.0 3.0 4.0 T A , AMBIENT TEMPERATURE (°C) BIAS VOLTAGE (VOLTS) Figure 3. Pulse Derating Curve Figure 4. Capacitance 5.0 100 I pp, PEAK PULSE CURRENT (AMPS) 1.0 I F , FORWARD CURRENT (A) 80 0.1 0.01 0.001 0.7 0.8 0.9 1.0 1.0 1.0 0 1.2 5.0 10 15 20 25 V F , FORWARD VOLTAGE (VOLTS) V C , CLAMPING VOLTAGE (VOLTS) Figure 5. Forward Voltage Figure 6. Clamping Voltage versus Peak Pulse Current (Reverse Direction) 30 100 I pp , PEAK FORWARD PULSE CURRENT (AMPS) 0.6 10 10 1.0 0.1 0 2.0 4.0 6.0 8.0 10 12 V C , FORWARD CLAMPING VOLTAGE (VOLTS) Figure 7. Clamping Voltage versus Peak Pulse Current (Forward Direction) MSQA6V–3/3