JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-553 Plastic-Encapsulate Diodes SOT-553 CESDLC3V0L4 SOT-553 Low Capacitance Quad Array for ESD Protection DESCRIPTION The CESDLC3V0L4 is designed to protect voltage sensitive components from 5 4 ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras 1 2 3 and many other portable applications where board space is at a premium. FEATURES z Four Separate Unidirectional Configurations for Protection z Low Leakage Current <1μA @ 3 Volts z Small Package z Low Capacitance z Complies to USB 1.1 Low Speed & Full Speed Specifications z These are Pb-Free Devices BENEFITS z Protects Four Lines Against Transient Voltage Conditions z Minimize Power Consumption of the System z Minimize PCB Board Space TYPICAL APPLICATIONS z Instrumentation Equipment z Serial and Parallel Ports z Microprocessor Based Equipment z Notebooks, Desktops, Servers z Cellular and Portable Equipment A,May,2011 ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise noted) Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Maximum Ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Limit Unit Peak Power Dissipation @ 8 X 20 μs @Ta= 25°C (Note 1) Ppk 20 W Steady State Power -- 1 Diode (Note 2) PD 150 mW RΘJA 833 ℃/W Maximum Junction Temperature Tjmax 150 ℃ Operating Junction and Storage Temperature Range Tj, Tstg Thermal Resistance Junction−to−Ambient Above 25 °C, Derate Lead Solder Temperature (10 Seconds Duration) -55 ~ +150 TL 260 ℃ ℃ Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (Ta= 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types) Device CESDLC3V0L4 Device Marking 5P Breakdown voltage VBR @ 1mA(Volts) Leakage current IRM @ VRM VC Max @IPP Capacitance @0V Bias (pF) (Note 3) Capacitance @3V Bias (pF) (Note 3) Min Mon Max VRWM IRWM (μA) VC (V) IPP (A) Max Max 5.3 5.6 5.9 3.0 1.0 10 1.6 13 9 1. Non-repetitive current per Figure 1. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR-4 board with min pad. 3. Capacitance of one diode at f = 1MHz, VR = 0 V, Ta = 25°C A,May,2011