SLVU2.8 Ultralow Capacitance TVS Diodes Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 400 WATTS 2.8 VOLTS P b Lead(Pb)-Free FEATURES: 3 * 400 W Peak Pulse Power per Line (tp=8/20 uS) * One Device Protects one Unidirectional Line. * Low Capacitance. * Low Leakage Current. * Low operating and Clamping Voltages. * Transient Protection for High Speed Data Lines.to * IEC61000-4-2(ESD) ±15kV(air), ±8kV(Contact) * IEC61000-4-4(EFT) 40A(5/50ns) * IEC61000-4-5(lightning) 24A(8/20µs) 1 2 SOT-23 Eqivalent Circuit Diagram: APPLICATIONS: * Ethernet 10/100/1000 Base T * WAN/LAN Equipment * Desktop,Services,Notebooks & Handhelds * Laser Diode Protection Absolute Maximum Ratings Parameter Symbol Value Units Peak Pulse Power(tp = 8/20μs) - See Fig.1 PPK 400 W Peak Pulse Current(tp = 8/20μs) IPP 24 A TSTG -55 to 150 °C Tj -55 to 150 °C Storage Temperature Range Operating Junction Temperature Range WEITRON http://www.weitron.com.tw 1/7 19-Apr-07 SLVU2.8 Electrical Characteristics Parameter Symbol Reverse Stand-Off Voltage Pin 3 to 1 or Pin 2 to 1 VRWM Min Typ Max Units - - 2.8 V Punch-Through Voltage IPT = 2µA, Pin 3 to 1 VPT 3.0 - - V Snap-Back Voltage ISB = 50mA, Pin 3 to 1 VSB 2.8 - - V IR - - 1 µA Reverse Leakage Current VRWM = 2.8V, T = 25°C Pin 3 to 1 or Pin 2 to 1 Clamping Voltage IPP =2A, tP=8/20µs, Pin 3 to 1 IPP =5A, tP=8/20µs, Pin 3 to 1 IPP =24A, tP=8/20µs, Pin 3 to 1 IPP =5A, tP=8/20µs, Pin 2 to 1 IPP =24A, tP=8/20µs, Pin 2 to 1 VC 3.9 7 12.5 8.5 15 V - - Cj - 70 3.5 100 5 pF Symbol Min Typ Max Units Reverse Breakdown Voltage IT =10µA, Pin 3 to 2 VBRR 40 - - V Reverse Leakage Current VRWM = 2.8V, T =25°C, Pin 3 to 2 IBRR - - 1 µA VF - - 2 V Junction Capacitance VR =0V, f =1MHz, Pin 3 to 1 and 2 (Pin 1 and 2 tied together) VR =0V, f =1MHz, Pin 2 to 1 (Pin 3 N.C.) Steering Diode Characteristics Parameter Forward Voltage IF =1A, Pin 2 to 3 WEITRON http://www.weitron.com.tw 2/7 19-Apr-07 SLVU2.8 Fig.1 Peak Pulse Power VS Pulse Time Electrical Parameter Symbol Parameter IPP Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR Reverse Stand-Off Voltage Reverse Leakage Current @ VRWM VSB Snap-Back Voltage @ ISB ISB Snap-Back Current VPT Punch-Through Voltage IPT Punch-Through Current VBRR Reverse Breakdown Voltage @ IBRR IBRR Reverse Breakdown Current Fig.2 SLVU2.8 IV Characteristic Curve Typical Characteristics Fig.4 Power Derating Curve Fig.3 Pulse Waveform WEITRON http://www.weitron.com.tw 3/7 19-Apr-07 SLVU2.8 Fig.5 Clamping Voltage vs Peak Pulse Current Fig.8 Insertion Loss S21 Fig.7 Reverse Voltage vs Capacitance WEITRON http://www.weitron.com.tw Fig.6 Forward Voltage vs Forward Current 4/7 19-Apr-07 SLVU2.8 Application Note The SLVU2.8 is ideal for providing protection for electronic equipment that is susceptible to damage caused by Electrostatic Discharge (ESD), Electrical Fast Transients (EFT) and tertiary lightning effects. This product is offered in a unidirectional configuration and provides both commonmode or differential-mode protection. Unidirectional Common-Mode Protection (Fig.9) The SLVU2.8 provides one line of unidirectional protection in a common-mode configuration as depicted in figure 9. Circuit connectivity is as follows: Line 1 is connected to Pin 3 Pins 1 and 2 are connected to ground Fig.9 Bidirectional Common-Mode Protection (Fig.10) Two SLVU2.8 devices provide one line of bidirectional protection in a common-mode configuration as depicted in fig.10 Circuit connectivity is as follows: * Line 1 is connected to Pin1 of Device 1 & Pin 2 of Device 2 * Pin 2 of Device 1 and Pin 1 of Device 2 are connected to ground * Pin 3 of both devices is not connected Fig.10 Bidirectional Differential-Mode Protection (Fig.11) Two SLVU2.8 devices provide up to two lines of bidrectional protection in a differenitalmode configuration as depicted in fig.11 Circuit connectivity is as follows: * Line 1 is connected to Pin1 of Device 1 & Pin 2 of Device 2 * Line 2 is connected to Pin 2 of Device 1 & Pin 1 of Device 2 Fig.11 Circuit Board Layout Protection Circuit board layout is critical for Electromagnetic Compatibility (EMC) protection. The following guidelines are recommended: * The protection device should be placed near the input terminals or connectors, the device will divert the transient current immediately before it can be coupled into the nearby traces. * The path length between the TVS device and the protected line should be minimized. * All conductive loops including power and ground loops should be minimized. * The transient current return path to ground should be kept as short as possible to reduce parasitic inductance. * Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. WEITRON http://www.weitron.com.tw 5/7 19-Apr-07 SLVU2.8 Typical Applications SLVU2.8 SLVU2.8 Fig12. 10/100 Ethernet Protection Circuit SLVU2.8 SLVU2.8 Fig13. 10/100 Ethernet “Enhanced” Lightning Protection Circuit WEITRON http://www.weitron.com.tw 6/7 19-Apr-07 SLVU2.8 SOT-23 Outline Dimensions Unit:mm A B TOP VIEW E G C D H K J WEITRON http://www.weitron.com.tw L M 7/7 Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 19-Apr-07