SEMICONDUCTOR PG2.8CUS23 TECHNICAL DATA Low Voltage EPD TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES E B L L EPD(Enhanced Punch-Through Diode) Structure. Transient protection for high-speed data lines to D 400 Watts peak pulse power (tp=8/20 s) 3 G A 2 H IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) 1 IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 24A(tp=8/20 s) P J C Tow devices protect two high-speed line pairs. K Low capacitance. Low leakage current. Low operating and clamping voltage. MILLIMETERS _ 0.20 2.93 + B C 1.30+0.20/-0.15 1.30 MAX D 0.45+0.15/-0.05 E G 2.40+0.30/-0.20 1.90 H J 0.95 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 0.20 MIN 1.00+0.20/-0.10 7 M N P N One device protects one directional line. P DIM A M 1. STEERING DIODE 2. EPD (TVS) 3. COMMON CATHODE APPLICATIONS Cellular Phone Handsets and Accessories. SOT-23 Microprocessor based equipment. Personal Digital Assistants (PDA’s) Notebooks, desktops PC, & servers. High-Speed data lines. Laser Diode Protection. LAN/WAN equipment. Marking 10/100 Ethernet. Lot No. 3 Type Name MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Peak Pulse Power (tp=8/20 s) PPK 400 W Peak Pulse Current (tp=8/20 s) IPP 24 A Operating Temperature Tj -55 150 Tstg -55 150 Storage Temperature 2006. 11. 8 2P8 2 3 2 Revision No : 1 1 1 1/3 PG2.8CUS23 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL VRWM Reverse Stand-Off Voltage TEST CONDITION MIN. TYP. MAX. UNIT - - 2.8 V Pin 3 to 2 or Pin 1 to 2 Punch-Through Voltage VPT IPT=2 A, Pin 3 to 2 3.0 - - V Snap-Back Voltage VSB ISB=50mA, Pin 3 to 2 2.8 - - V - - 1 A IPP=2A, tp=8/20 s, Pin 3 to 2 - - 3.9 IPP=5A, tp=8/20 s, Pin 3 to 2 - - 7 IPP=24A, tp=8/20 s, Pin 3 to 2 - - 12.5 IPP=5A, tp=8/20 s, Pin 1 to 2 - - 8.5 IPP=24A, tp=8/20 s, Pin 1 to 2 - - 15 - 70 100 IR Reverse Leakage Current VC Clamping Voltage VRWM=2.8V, Tc=25 Pin 3 to 2 or Pin 1 to 2 VR=0V, f=1MHz (Pin 3 to 1&2) CJ Junction Capacitance [Pin 1&2 tied together] V pF VR=0V, f=1MHz (Pin 1 to 2) - 5 10 MIN. TYP. MAX. UNIT 40 - - V [Pin 3 N.C.] Steering Diode Characteristics CHARACTERISTIC SYMBOL VBR Reverse Breakdown Voltage TEST CONDITION It= A, Pin 3 to 1 Reverse Leakage Current IR VRWM=2.8V, Tc=25 , Pin 3 to 1 - - 1 A Forward Voltage VF IF=1A, Pin 1 to 3 - - 2 V EPD TVS Characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. I PP The EPD mechanism is achieved by engineering the center region of the device such that the reverse biased junction does not avalanche, but will “punch-through” to a conducting state. This structure results in a device with superior dc electrical parameters at low voltages while maintaining the capability to absorb high transient currents. I SB The IV characteristic curve of the EPD device is shown in figure 1. The device represents a high impedance to the circuit up to the working voltage (VRWM). During a transient event, the device will begin to VBRR I PT IR conduct as it is biased in the reverse direction. VRWM VSB VPT VC When the punch-through voltage (VPT) is exceeded, the device enters a low impedance state, diverting the transient current away from the I BRR protected circuit. When the device is conducting current, it will exhibit a slight “snap-back” or negative resistance characteristic due to its structure. This must be considered when connecting the device to a power supply rail. To return to a non-conducting state, the current through the device must fall below the snap-back current. (approximately<50mA.) 2006. 11. 8 Figure 1. EPD TVS VI Characteristic curve. Revision No : 1 2/3 PG2.8CUS23 NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME POWER DERATION CURVE 110 RATED POWER OR IPP (%) PEAK PULSE POWER PPP (kW) 10 1 0.1 0.01 0.1 1 10 100 90 80 70 60 50 40 30 20 10 0 Average Power 0 1k 100 Peak Pulse Power 8/20us PULSE DURATION tp (µs) 25 125 150 18 CLAMPING VOLTAGE VC (V) PEAK PULSE CURRENT I PP (%) 100 CLAMPING VOLTAGE VS. PEAK PULSE CURRENT Waveform Parameters : tr=8µs td=20µs 100 90 80 70 60 50 40 30 20 10 0 75 AMBIENT TEMPERATURE Ta ( C) PULSE WAVEFORM 110 50 e -t td=lpp/2 16 14 Pin 1 to 2 12 10 8 Pin 3 to 2 6 Waveform Parameters : tr=8µs td=20µs 4 2 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 TIME (µs) PEAK PULSE CURRENT I PP (A) C J - VR C J - VR 35 10 100 CAPACITANCE C J (pF) CAPACITANCE C J (pF) 9 75 50 25 8 7 6 5 4 3 2 1 0 0 0 2006. 11. 8 1 2 REVERSE VOLTAGE VR (VOLTS) Pin 3 to 1 & 2 (Pin 1 & 2 tied together) Revision No : 1 3 0 1 2 REVERSE VOLTAGE VR (VOLTS) Pin 1 to 2 (Pin 3 N.C.) 3 3/3