WINSEMI STU4A60H

STU4A60H
Bi-Directional Triode Thyristor
Features
◆
◆
◆
◆
◆
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ ITM)
High Commutation dv/dt
High Junction temperature(TJ=150℃)
General Description
4A60H is designed for full wave AC control applications.
Winsemi Triac STF
STF4
It can be used as an ON/OFF function or for phase control operation.
Typical Application
■ Home Appliances : Washing Machines, Vacuum Cleaners,
Micro Wave Ovens, Hair Dryers,
applications
■ Industrial Use : SMPS, Copier Machines, Motor Controls,
Heater Controls, Vending Machines,
applications
Absolute Maximum Ratings (T =
J
Symbol
VDRM /VRRM
IT(RMS)
ITSM
2
Para
mete
Repetitive Peak
Off-State Voltage
r
R.M.S On-State Current
Rice Cookers,
other control
A1
A2
Dimmer, SSR,
other control
TO-251
25°C unless otherwise specified)
Condition
TJ = 1118 °C
50/60Hz, One cycle, Peak value, non-repetitive
Surge On-State Current
G
Ratings Units
600
V
4.0
A
27/30
A
It
I2t
3.7
A2 s
PGM
Peak Gate Power Dissipation
1.5
W
PG(AV)
Average Gate Power Dissipation
0.1
W
IGM
Peak Gate Current
1.0
A
VGM
Peak Gate Voltage
7.0
V
TJ
Operating Junction Temperature
-40~+150
℃
TSTG
Storage Temperature
-40~+150
℃
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJc
Thermal Resistance Junction to Case(DC)
3
℃/W
RθJA
Thermal Resistance Junction to Ambient(DC)
75
℃/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-1
4A60
H
STU
TU4
60H
Electrical Characteristics (TC=25℃
unless otherwise noted)
Characteristics
Symbol
Min
Typ.
Max
Unit
-
-
1
mA
-
1.2
1.7
V
T2+,G+
-
-
5
T2+,G-
-
-
5
T2-,G-
-
-
5
T2+,G+
-
-
1.5
T2+,G-
-
-
1.5
T2-,G-
-
-
1.5
TJ=150℃
0.2
-
-
V
TJ=150℃
3
-
-
V/μs
off-state leakage current
IDRM/IRRM
(VAK= VDRM/VRRM Single phase, half wave)
VTM
Forward “On” voltage (IT=4.5A, Inst. Measurement)
IGT
Gate trigger current (continuous dc)
(VAK = 6 Vdc, RL = 10 Ω)
VGT
VGD
Gate Trigger Voltage (Continuous dc) )
(VAK = 6 Vdc, RL = 10 Ω)
Gate threshold Voltage VD=1/2VDRM,
TJ=50℃
mA
V
Critical Rate of Rise of Off-State Voltage at Commutation
(dv/dt)c
(VD=0.67VDRM ;(di/dt)C=-1.5A/ms)
IH
Holding Current
-
2
-
mA
IL
latching current
-
2
6
mA
2/5
Steady, all for your advance
advance..
4A60
H
STU
TU4
60H
3/5
Steady, all for your advance
advance..
4A60
H
STU
TU4
60H
4/5
Steady, all for your advance
advance..
4A60
H
STU
TU4
60H
251 Package Dimension
TOTO-251
Unit: mm
5/5
Steady, all for your advance
advance..