WINSEMI WTD8A60

D8
A60
WT
WTD8
D8A60
Bi-Directional Triode Thyristor
Features
�
Repetitive Peak off -State Voltage:600V
�
R.M.S On-State Current(IT(RMS)=8A)
�
High Commutation dv/dt
�
Isolation Voltage (VISO=1500V AC)
General Description
This device fully isolated package suitable for AC switching
application,phase control application such as fan speed and
temperature
modulation
control,lighting
control
and
static
switching relay. This device is approved to comply with applicable
requirements by Underwriters Laboratories Inc.
Absolute Maximum Ratings (TJ=25℃
symbol
unless otherwise specified)
Parameter
condition
Ratings
Units
600
V
8.0
A
80/88
A
I 2t
32
A2s
Peak Gate Power Dissipation
5.0
W
Average Gate Power dissipation
0.5
W
IGM
Peak Gate Current
2.0
A
VGM
Peak Gate Voltage
10
V
VISO
Isolation Breakdown voltage(R.M.S.)
1500
V
Operating Junction Temperature
-40~125
℃
Storage Temperature
-40~150
℃
VDRM
Repetitive Peak Off-State Voltage
IT(RMS)
R.M.S On-State Current
ITSM
Surge On-State Current
Tc=89℃
One Cycle, 50Hz/60Hz,
Peak,Non-Repetitive
I2t
PGM
PG(AV)
TJ
TSTG
A.C 1 minute
Thermal Characteristics
Parameter
Symbol
RθJc
Thermal Resistance Junction to Case
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Value
3.7
Units
℃/W
A60
WTD8
D8A60
Electrical Characteristics(Tc=25℃ unless otherwise noted)
Symbol
Items
conditions
Repetitive Peak Off-State
Unit
Min
Typ
Max
-
-
2.0
mA
-
-
1.4
V
-
-
30
-
-
30
VD=VDRM,Single Phase, Half
IDRM
Wave TJ=125℃
Current
VTM
Ratin
Peak On-State Voltage
IT=12A,Inst.Measurement
I+GT1
Ⅰ
I-GT1
Ⅱ
I-GT1
Ⅲ
-
-
30
V+GT1
Ⅰ
-
-
1.5
V-GT1
Ⅱ
-
-
1.5
V-GT3
Ⅲ
-
-
1.5
0.2
-
-
V
10
-
-
V/µs
-
15
-
mA
VGD
Gate Trigger Current
Gate Trigger Voltage
VD=6V,RL=10Ω
Non-Trigger Gate Voltage
TJ=125℃,VD=1/2VDRM
Critical Rate of Rise Off-State
TJ=125℃,[di/dt]c=-4.0A/ms,
Voltage at Commutation
VD=2/3VDRM
(dv/dt)c
IH
VD=6V,RL=10Ω
Holding Current
mA
V
2/5
Steady, keep you advance
A60
WTD8
D8A60
Fig1.Gate Characteristics
Fig.2 On-State Voltage
Fig.3 On State Current vs.Maximum
Power Dissipation
Fig.4 On State Current vs.Allowable
Case Temperature
Fig.5Surge On-State Current Rating
Fig.6 Gate Trigger Voltage vs.
Junction Temperature
(Non-Repetitive)
3/5
Steady, keep you advance
A60
WTD8
D8A60
Fig.7 Gate Trigger Current vs.
Junction Temperature
Fig.8 Transient Thermal Impedance
Fig.9 Gate Trigger Characteristics Test Circuit
4/5
Steady, keep you advance
A60
WTD8
D8A60
DPAK Package Dimension
Unit:mm
5/5
Steady, keep you advance