WTF4A60 de Thyrist or Bi-Directional Trio riode Thyristo Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ Low On-State Voltage (1.6V(Typ.) @ ITM) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC ) General Description Standard gate triggering Triac is suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. By using an internal ceramic pad, the TO220F series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (file ref.:E347423) Absolute Maximum Ratings (T = J Symbol VDRM /VRRM 25°C unless otherwise specified) Parame Condition Repetitive Peak Off-State Voltage IT(RMS) R.M.S On-State Current ITSM Surge On-State Current TJ = 105 °C One cycle, Peak value, 2 Ratings Units It I2t P GM Peak Gate Power Dissipation 600 V 4.0 A 50Hz 30 60Hz 31 A non-repetitive full cycle 5.1 A2s 5 W 1 W 4.0 A 7.0 V P G(AV) Average Gate Power Dissipation TJ = 125 °C IGM Peak Gate Current TJ = 125 °C V GM Peak Gate Voltage TJ Operating Junction Temperature -40~+150 ℃ T STG Storage Temperature -40~+150 ℃ Thermal Characteristics Symbol Parameter Value Units RθJc Thermal Resistance Junction to Case(DC) 4 ℃/W RθJA Thermal Resistance Junction to Ambient(DC) 60 ℃/W Jan 2009. Rev. 0 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. T02-1 WTF4A60 Electrical Characte Characterristics (TC=25℃ Characteristics Symbol IDRM/IRRM unless otherwise noted) Typ. Max Unit off-state leakage current TJ=25℃ - - 5 μA (VAK= VDRM/VRRM Single phase, half wave) TJ=125℃ - - 1 mA - 1.2 1.6 V T2+,G+ - - 35 T2+,G- - - 35 T2-,G- - - 35 T2+,G+ - - 1.5 T2+,G- - - 1.5 T2-,G- - - 1.5 TJ=125℃ 0.2 - - V TJ=125℃ 400 - - V/μs VTM Forward “On” voltage (IT=5A, Inst. Measurement) IGT Gate trigger current (continuous dc) (VAK = 6 Vdc, RL = 10 Ω) Note:1 VGT Min Gate Trigger Voltage (Continuous dc) ) (VAK = 6 Vdc, RL = 10 Ω) Note:1 mA V Gate threshold Voltage VGD ＶＤ=1/2VDRM, RL = 3.3K Ω Critical Rate of Rise of Off-State Voltage at Commutation dv/dt (VD=0.67VDRM ;gate open) Note:2 IH Holding Current - - 35 mA IL latching current - - 60 mA Note 1: minimum IGT is guaranted at 5% of IGT max. 2: for both polarities of A2 referenced to A1. 2 /5 Steady, keep you advance WTF4A60 3 /5 Steady, keep you advance WTF4A60 4 /5 Steady, keep you advance WTF4A60 TO220F Package Dimension Unit: mm 5 /5 Steady, keep you advance