A Product Line of Diodes Incorporated ZXTC2062E6 20V, SOT23-6, complementary medium power transistors Summary BVCEO > 20 (-20)V BVECO > 5 (-4)V IC(cont) = 4 (-3.5)A VCE(sat) < 50 (-65)mV @ 1A RCE(sat) = 35 (54)m⍀ PD = 1.1W Description C1 Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT23-6 package provides a compact solution for the intended applications C2 B1 Features B2 E1 • NPN-PNP combination • Very low saturation voltage • High gain • SOT23-6 package E2 Applications • MOSFET and IGBT gate driving • Motor drive Ordering information DEVICE ZXTC2062E6TA Reel size (inches) Tape width (mm) Quantity per reel 7 8 3000 Device marking © Diodes Incorporated 2008 E1 B1 B2 C2 E2 Top view 2062 Issue 2 - October 2008 C1 1 www.zetex.com www.diodes.com ZXTC2062E6 Absolute maximum and thermal ratings PARAMETER Symbol Limit Unit Collector-base voltage VCBO 100(-25) V Collector-emitter voltage VCEO (-)20 V Emitter-collector voltage (reverse blocking) VECO 5(-4) V Emitter-base voltage VEBO (-)7 V IC 4(-3.5) A ICM (-)10 A Base current IB (-)1 A Power dissipation at TA =25°C(a)(f) PD 0.7 W 5.6 mW/°C 0.9 W 7.2 mW/°C 1.1 W 8.8 mW/°C 1.1 W 8.8 mW/°C 1.7 W 13.6 mW/°C Continuous collector current(c)(f) Peak pulse current Linear derating factor PD Power dissipation at TA =25°C(b)(f) Linear derating factor PD Power dissipation at TA =25°C(b)(g) Linear derating factor PD Power dissipation at TA =25°C(c)(f) Linear derating factor PD Power dissipation at TA =25°C(d)(f) Linear derating factor Operating and storage temperature range Tj, Tstg -55 to +150 °C Thermal resistance junction to ambient(a)(f) RθJA 179 °C/W Thermal resistance junction to ambient(b)(f) RθJA 139 °C/W Thermal resistance junction to ambient(b)(g) RθJA 113 °C/W Thermal resistance junction to ambient(c)(f) RθJA 113 °C/W Thermal resistance junction to ambient(d)(f) RθJA 73 °C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As above measured at t<5 seconds. (e) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (f) For device with one active die, both collectors attached to a common sink. (g) For device with two active dice running at equal power, split sink 50% to each collector. Issue 2 - October 2008 © Diodes Incorporated 2008 2 www.zetex.com www.diodes.com ZXTC2062E6 Thermal characteristics Issue 2 - October 2008 © Diodes Incorporated 2008 3 www.zetex.com www.diodes.com ZXTC2062E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Emitter-collector breakdown voltage (base open) Collector-base cut-off current Emitter-base cut-off current Collector-emitter saturation voltage Symbol BVCBO Min. 100(-25) Typ. 140(-55) BVCEO (-)20 35(-45) V IC = (-)10mA (*) BVEBO (-)7 (-)8.3 V IE = (-)100A BVECO 5(-4) 6(-8.5) V IE = (-)100A Unit Conditions V IC = (-)100A ICBO <1 (-)50 nA IEBO <1 (-)0.5 (-)50 A nA 40(-55) 50(-65) mV IC = (-)1A, IB = (-)100mA(*) 60(-100) 75(-135) mV IC = (-)1A, IB = (-)20mA(*) 95(-185) 115(-280) mV IC = (-)2A, IB = (-)40mA(*) VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter turn-on voltage VBE(on) Static forward current transfer ratio hFE Transition frequency Max. fT (-250) mV (IC = -3.5A, IB = -175mA)(*) 140 190 mV IC = 4A, IB = 200mA(*) (-925) (-1000) mV (IC = -3.5A, IB = -175mA(*)) 940 1050 mV IC = 4A, IB = 200mA(*) (-835) (-900) mV (IC = -3.5A, VCE = -2V(*)) 810 900 mV IC = 4A, VCE = 2V(*) 300(300) 450(450) 900(900) IC = (-)10mA, VCE = (-)2V(*) 280(170) 420(300) IC = (-)1A, VCE = (-)2V(*) (65) (100) (IC = -3.5A, VCE = -2V(*)) 140 210 IC = 4A, VCE = 2V(*) (15) (IC = -10A, VCE = -2V(*)) 15 IC = 15A, VCE = 2V(*) 215 MHz IC = (-)50mA, VCE = (-)10V f = 100MHz Output capacitance COBO Delay time td 68(56) ns Rise time Storage time Fall time tr 72(68) 361(158) 64(59) ns ns ns tf VEB = (-)5.6V (-190) (290) 17(21) ts VCB =100(-25)V VCB =100(-25)V, Tamb= 100°C 25(30) pF VCB = (-)10V, f = 1MHz(*) VCC = (-)10V. IC = (-)1A, IB1 = -IB2= (-)10mA. NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. ( ) = PNP Issue 2 - October 2008 © Diodes Incorporated 2008 4 www.zetex.com www.diodes.com ZXTC2062E6 NPN electrical characteristics 1 0.5 Tamb=25°C 0.4 VCE(SAT) (V) IC/IB=50 100m VCE(SAT) (V) IC/IB=10 IC/IB=100 IC/IB=20 10m IC/IB=10 1m 1m 10m 100m 1 IC Collector Current (A) 0.3 150°C 0.2 100°C 0.1 25°C -55°C 0.0 1m 10 10m 600 1.2 1.0 0.8 0.6 0.4 500 100°C 400 25°C 300 200 -55°C 100 0.2 0.0 1m 700 10m 100m 1 IC Collector Current (A) 10 0 1.0 VBE(SAT) (V) VCE=2V Typical Gain (hFE) Normalised Gain 1.2 150°C 1 10 VCE(SAT) v IC VCE(SAT) v IC 1.4 100m IC Collector Current (A) 25°C -55°C 0.8 150°C 0.6 100°C 0.4 1m hFE v IC IC/IB=10 10m 100m 1 IC Collector Current (A) 10 VBE(SAT) v IC 1.0 VCE=2V -55°C 25°C VBE(ON) (V) 0.8 0.6 150°C 0.4 100°C 0.2 1m 10m 100m 1 IC Collector Current (A) 10 VBE(ON) v IC Issue 2 - October 2008 © Diodes Incorporated 2008 5 www.zetex.com www.diodes.com ZXTC2062E6 PNP electrical characteristics 1 0.6 Tamb=25°C - VCE(SAT) (V) IC/IB=100 100m - VCE(SAT) (V) 0.5 IC/IB=50 10m IC/IB=20 IC/IB=10 1m 1m 10m 100m 1 - IC Collector Current (A) 0.4 0.3 25°C 0.6 0.4 -55°C 0.2 0.0 1m 10m 100m 1 - IC Collector Current (A) 10 900 850 800 750 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 - VBE(SAT) (V) 100°C 25°C -55°C 10m 100m 1 - IC Collector Current (A) 10 VCE(SAT) v IC Typical Gain (hFE) Normalised Gain 1.4 1.2 1.0 0.8 VCE=2V 150°C 100°C 0.1 VCE(SAT) v IC 1.8 1.6 150°C 0.2 0.0 1m 10 IC/IB=10 1.2 IC/IB=10 1.0 -55°C 0.8 150°C 0.6 100°C 0.4 1m hFE v IC 25°C 10m 100m 1 - IC Collector Current (A) 10 VBE(SAT) v IC 1.2 VCE=2V 1.0 25°C - VBE(ON) (V) -55°C 0.8 0.6 150°C 100°C 0.4 0.2 1m 10m 100m 1 - IC Collector Current (A) 10 VBE(ON) v IC Issue 2 - October 2008 © Diodes Incorporated 2008 6 www.zetex.com www.diodes.com ZXTC2062E6 Package outline SOT23-6 Package outline Pad latout details 0.95 0.037 1.06 0.042 2.2 0.087 mm inches 0.65 0.026 DIM A A1 A2 b C D E E1 L e e1 L Millimeters Min. 0.90 0.00 0.90 0.35 0.09 2.70 2.20 1.30 0.10 Inches Max. 1.45 0.15 1.30 0.50 0.26 3.10 3.20 1.80 0.60 Min. 0.354 0.00 0.0354 0.0078 0.0035 0.1062 0.0866 0.0511 0.0039 0.95 REF 1.90 REF 0° Max. 0.0570 0.0059 0.0511 0.0196 0.0102 0.1220 0.1181 0.0708 0.0236 0.0374 REF 0.0748 REF 30° 0° 30° Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 2 - October 2008 © Diodes Incorporated 2008 7 www.zetex.com www.diodes.com ZXTC2062E6 Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office. Quality of product Diodes Zetex Semconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes Inc. or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com Diodes Inc. does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Diodes Inc. is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: “Preview” Future device intended for production at some point. Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. Sales offices The Americas Europe Taiwan Shanghai Shenzhen Korea 3050 E. 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